NGTB40N65IHL2 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NGTB40N65IHL2
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 150 W
|Vce|ⓘ - Tensión máxima colector-emisor: 650 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 40 A
Tjⓘ - Temperatura máxima de unión: 175 ℃
CARACTERÍSTICAS ELÉCTRICAS
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.8 V @25℃
Coesⓘ - Capacitancia de salida, typ: 130 pF
Encapsulados: TO247
Búsqueda de reemplazo de NGTB40N65IHL2 IGBT
- Selección ⓘ de transistores por parámetros
NGTB40N65IHL2 datasheet
ngtb40n65ihl2.pdf
NGTB40N65IHL2WG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for half bridge resonant applications. Incorporated into the device is a soft and fast co-p
ngtb40n65ihl2wg.pdf
NGTB40N65IHL2WG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for half bridge resonant applications. Incorporated into the device is a soft and fast co-p
ngtb40n65fl2.pdf
NGTB40N65FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft http //
ngtb40n65fl2wg.pdf
DATA SHEET www.onsemi.com IGBT - Field Stop II 40 A, 650 V VCEsat = 1.7 V NGTB40N65FL2WG Eoff = 0.44 mJ This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior C performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for
Otros transistores... AP50G60SW , IRGP4263 , MMG50A120B7HN , MMG50H120H6HN , MMG50HB120H6HN , NGTB35N60FL2WG , NGTB35N65FL2 , NGTB35N65FL2WG , TGAN60N60F2DS , NGTB40N65IHL2WG , NGTB45N60S1 , NGTB45N60S1WG , NGTB45N60S2 , NGTB45N60S2WG , NGTG35N65FL2 , NGTG35N65FL2WG , RJH60D7BDPQ-E0 .
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
Popular searches
2sb649 | 2sb324 transistor | b754 transistor | 2sc828 equivalent | 4843ns | 2sc1318 datasheet | 2sc3281 datasheet | 2sa1106