Справочник IGBT. NGTB40N65IHL2

 

NGTB40N65IHL2 - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: NGTB40N65IHL2
   Тип транзистора: IGBT
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 150 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 650 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 40 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.8 V @25℃
   Tjⓘ - Максимальная температура перехода: 175 ℃
   Coesⓘ - Выходная емкость, типовая: 130 pF
   Тип корпуса: TO247

 Аналог (замена) для NGTB40N65IHL2

 

 

NGTB40N65IHL2 Datasheet (PDF)

 ..1. Size:180K  onsemi
 ngtb40n65ihl2.pdf

NGTB40N65IHL2 NGTB40N65IHL2

NGTB40N65IHL2WGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on state voltage and minimal switching loss. The IGBT iswell suited for half bridge resonant applications. Incorporated into thedevice is a soft and fast co-p

 0.1. Size:175K  onsemi
 ngtb40n65ihl2wg.pdf

NGTB40N65IHL2 NGTB40N65IHL2

NGTB40N65IHL2WGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on state voltage and minimal switching loss. The IGBT iswell suited for half bridge resonant applications. Incorporated into thedevice is a soft and fast co-p

 5.1. Size:137K  onsemi
 ngtb40n65fl2.pdf

NGTB40N65IHL2 NGTB40N65IHL2

NGTB40N65FL2WGIGBT - Field Stop IIThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop II Trench construction, and provides superiorperformance in demanding switching applications, offering both lowon state voltage and minimal switching loss. The IGBT is well suitedfor UPS and solar applications. Incorporated into the device is a softhttp://

 5.2. Size:270K  onsemi
 ngtb40n65fl2wg.pdf

NGTB40N65IHL2 NGTB40N65IHL2

DATA SHEETwww.onsemi.comIGBT - Field Stop II40 A, 650 VVCEsat = 1.7 VNGTB40N65FL2WGEoff = 0.44 mJThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop II Trench construction, and provides superiorCperformance in demanding switching applications, offering both lowon state voltage and minimal switching loss. The IGBT is well suitedfor

Другие IGBT... AP50G60SW , IRGP4263 , MMG50A120B7HN , MMG50H120H6HN , MMG50HB120H6HN , NGTB35N60FL2WG , NGTB35N65FL2 , NGTB35N65FL2WG , MGD623S , NGTB40N65IHL2WG , NGTB45N60S1 , NGTB45N60S1WG , NGTB45N60S2 , NGTB45N60S2WG , NGTG35N65FL2 , NGTG35N65FL2WG , RJH60D7BDPQ-E0 .

 

 
Back to Top