NGTB40N65IHL2 PDF and Equivalents Search

 

NGTB40N65IHL2 Specs and Replacement

Type Designator: NGTB40N65IHL2

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 150 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 40 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃

Coesⓘ - Output Capacitance, typ: 130 pF

Package: TO247

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NGTB40N65IHL2 datasheet

 ..1. Size:180K  onsemi
 ngtb40n65ihl2.pdf pdf_icon

NGTB40N65IHL2

NGTB40N65IHL2WG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for half bridge resonant applications. Incorporated into the device is a soft and fast co-p... See More ⇒

 0.1. Size:175K  onsemi
 ngtb40n65ihl2wg.pdf pdf_icon

NGTB40N65IHL2

NGTB40N65IHL2WG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for half bridge resonant applications. Incorporated into the device is a soft and fast co-p... See More ⇒

 5.1. Size:137K  onsemi
 ngtb40n65fl2.pdf pdf_icon

NGTB40N65IHL2

NGTB40N65FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft http //... See More ⇒

 5.2. Size:270K  onsemi
 ngtb40n65fl2wg.pdf pdf_icon

NGTB40N65IHL2

DATA SHEET www.onsemi.com IGBT - Field Stop II 40 A, 650 V VCEsat = 1.7 V NGTB40N65FL2WG Eoff = 0.44 mJ This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior C performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for... See More ⇒

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Specs: AP50G60SW , IRGP4263 , MMG50A120B7HN , MMG50H120H6HN , MMG50HB120H6HN , NGTB35N60FL2WG , NGTB35N65FL2 , NGTB35N65FL2WG , TGAN60N60F2DS , NGTB40N65IHL2WG , NGTB45N60S1 , NGTB45N60S1WG , NGTB45N60S2 , NGTB45N60S2WG , NGTG35N65FL2 , NGTG35N65FL2WG , RJH60D7BDPQ-E0 .

History: VS-EMG050J60N

Keywords - NGTB40N65IHL2 transistor spec

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