NGTG35N65FL2WG Todos los transistores

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NGTG35N65FL2WG - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NGTG35N65FL2WG

Código: G35N65FL2

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 150

Tensión colector-emisor (Vce): 650

Voltaje de saturación colector-emisor (Vce sat): 1.7

Tensión emisor-compuerta (Veg): 20

Corriente del colector DC máxima (Ic): 35

Temperatura operativa máxima (Tj), °C: 175

Tiempo de elevación: 40

Capacitancia de salida (Cc), pF: 149

Empaquetado / Estuche: TO247

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NGTG35N65FL2WG Datasheet (PDF)

1.1. ngtg35n65fl2.pdf Size:84K _igbt

NGTG35N65FL2WG
NGTG35N65FL2WG

NGTG35N65FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. http://onsemi.com Features • Extremely Eff

1.2. ngtg35n65fl2wg.pdf Size:84K _igbt

NGTG35N65FL2WG
NGTG35N65FL2WG

NGTG35N65FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. http://onsemi.com Features • Extremely Eff

5.1. ngtg30n60flwg.pdf Size:173K _igbt

NGTG35N65FL2WG
NGTG35N65FL2WG

NGTG30N60FLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. http://onsemi.com Features • Low Saturation Voltage using Trench with Field Stop Technology • Low Switching Loss Reduces System

5.2. ngtg30n60fwg.pdf Size:173K _igbt

NGTG35N65FL2WG
NGTG35N65FL2WG

NGTG30N60FWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. http://onsemi.com Features • Optimized for Very Low VCEsat • Low Switching Loss Reduces System Power Dissipation 30 A, 600 V

Otros transistores... NGTB35N65FL2WG , NGTB40N65IHL2 , NGTB40N65IHL2WG , NGTB45N60S1 , NGTB45N60S1WG , NGTB45N60S2 , NGTB45N60S2WG , NGTG35N65FL2 , SGH80N60UFD , RJH60D7BDPQ-E0 , RJH60D7DPQ-E0 , IGW50N65F5 , IGW50N65H5 , IKW50N65F5 , IKW50N65H5 , IRG8P40N120KD , IRGP6650D .

 


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Introduzca al menos 1 números o letras