NGTG35N65FL2WG PDF and Equivalents Search

 

NGTG35N65FL2WG Specs and Replacement

Type Designator: NGTG35N65FL2WG

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 150 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 35 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃

tr ⓘ - Rise Time, typ: 40 nS

Coesⓘ - Output Capacitance, typ: 149 pF

Package: TO247

 NGTG35N65FL2WG Substitution

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NGTG35N65FL2WG datasheet

 ..1. Size:82K  onsemi
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NGTG35N65FL2WG

NGTG35N65FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. www.onsemi.com Features Extremely Effici... See More ⇒

 2.1. Size:84K  onsemi
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NGTG35N65FL2WG

NGTG35N65FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. http //onsemi.com Features Extremely Eff... See More ⇒

 9.1. Size:173K  onsemi
ngtg30n60flwg.pdf pdf_icon

NGTG35N65FL2WG

NGTG30N60FLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. http //onsemi.com Features Low Saturation Voltage using Trench with Field Stop Technology Low Switching Loss Reduces System... See More ⇒

 9.2. Size:169K  onsemi
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NGTG35N65FL2WG

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Specs: NGTB35N65FL2WG , NGTB40N65IHL2 , NGTB40N65IHL2WG , NGTB45N60S1 , NGTB45N60S1WG , NGTB45N60S2 , NGTB45N60S2WG , NGTG35N65FL2 , TGPF30N43P , RJH60D7BDPQ-E0 , RJH60D7DPQ-E0 , IGW50N65F5 , IGW50N65H5 , IKW50N65F5 , IKW50N65H5 , IRG8P40N120KD , IRGP6650D .

History: HIH30N140IH-DB | IKW50N65H5 | KGF15N120KDA | STGP30H60DF | SKW10N60A | STGW15H120F2 | STGB20V60F

Keywords - NGTG35N65FL2WG transistor spec

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