RJH60D7DPQ-E0 Todos los transistores

 

RJH60D7DPQ-E0 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RJH60D7DPQ-E0

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 300

Tensión colector-emisor (Vce): 600

Voltaje de saturación colector-emisor (Vce sat): 1.6

Tensión emisor-compuerta (Veg): 30

Corriente del colector DC máxima (Ic): 90

Temperatura operativa máxima (Tj), °C: 150

Tiempo de elevación: 46

Capacitancia de salida (Cc), pF: 160

Empaquetado / Estuche: TO247

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RJH60D7DPQ-E0 Datasheet (PDF)

1.1. r07ds0176ej rjh60d7dpm.pdf Size:84K _renesas

RJH60D7DPQ-E0
RJH60D7DPQ-E0

Preliminary Datasheet RJH60D7DPM R07DS0176EJ0200 Silicon N Channel IGBT Rev.2.00 Application: Inverter Nov 16, 2010 Features ? Short circuit withstand time (5 ?s typ.) ? Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25C) ? Built in fast recovery diode (100 ns typ.) in one package ? Trench gate and thin wafer technology ?

1.2. r07ds0165ej rjh60d7dpk.pdf Size:83K _renesas

RJH60D7DPQ-E0
RJH60D7DPQ-E0

Preliminary Datasheet RJH60D7DPK R07DS0165EJ0300 Silicon N Channel IGBT Rev.3.00 Application: Inverter Nov 16, 2010 Features ? Short circuit withstand time (5 ?s typ.) ? Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25C) ? Built in fast recovery diode (100 ns typ.) in one package ? Trench gate and thin wafer technology ?

 1.3. rjh60d7dpm.pdf Size:110K _igbt

RJH60D7DPQ-E0
RJH60D7DPQ-E0

 Preliminary Datasheet RJH60D7DPM R07DS0176EJ0400 600V - 50A - IGBT Rev.4.00 Application: Inverter Dec 07, 2012 Features  Short circuit withstand time (5 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode (100 ns typ.) in one package  Trench gate and thin wafer techno

1.4. rjh60d7dpq-e0.pdf Size:104K _igbt

RJH60D7DPQ-E0
RJH60D7DPQ-E0

 Preliminary Datasheet RJH60D7DPQ-E0 R07DS0740EJ0100 600V - 50A - IGBT Rev.1.00 Application: Inverter Apr 19, 2012 Features  Short circuit withstand time (5 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode (100 ns typ.) in one package  Trench gate and thin wafer tec

 1.5. rjh60d7dpk.pdf Size:98K _igbt

RJH60D7DPQ-E0
RJH60D7DPQ-E0

 Preliminary Datasheet RJH60D7DPK R07DS0165EJ0400 600V - 50A - IGBT Rev.4.00 Application: Inverter Apr 19, 2012 Features  Short circuit withstand time (5 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode (100 ns typ.) in one package  Trench gate and thin wafer techno

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