Справочник IGBT. RJH60D7DPQ-E0

 

RJH60D7DPQ-E0 - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: RJH60D7DPQ-E0
   Тип транзистора: IGBT
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 300 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 600 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 30 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 90 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.6 V @25℃
   Tjⓘ - Максимальная температура перехода: 150 ℃
   trⓘ - Время нарастания типовое: 46 nS
   Coesⓘ - Выходная емкость, типовая: 160 pF
   Тип корпуса: TO247

 Аналог (замена) для RJH60D7DPQ-E0

 

 

RJH60D7DPQ-E0 Datasheet (PDF)

 ..1. Size:104K  renesas
 rjh60d7dpq-e0.pdf

RJH60D7DPQ-E0 RJH60D7DPQ-E0

Preliminary Datasheet RJH60D7DPQ-E0 R07DS0740EJ0100600V - 50A - IGBT Rev.1.00Application: Inverter Apr 19, 2012Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer tec

 5.1. Size:84K  renesas
 r07ds0176ej rjh60d7dpm.pdf

RJH60D7DPQ-E0 RJH60D7DPQ-E0

Preliminary Datasheet RJH60D7DPM R07DS0176EJ0200Silicon N Channel IGBT Rev.2.00Application: Inverter Nov 16, 2010Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer t

 5.2. Size:83K  renesas
 r07ds0165ej rjh60d7dpk.pdf

RJH60D7DPQ-E0 RJH60D7DPQ-E0

Preliminary Datasheet RJH60D7DPK R07DS0165EJ0300Silicon N Channel IGBT Rev.3.00Application: Inverter Nov 16, 2010Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer t

 5.3. Size:98K  renesas
 rjh60d7dpk.pdf

RJH60D7DPQ-E0 RJH60D7DPQ-E0

Preliminary Datasheet RJH60D7DPK R07DS0165EJ0400600V - 50A - IGBT Rev.4.00Application: Inverter Apr 19, 2012Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer techno

 5.4. Size:110K  renesas
 rjh60d7dpm.pdf

RJH60D7DPQ-E0 RJH60D7DPQ-E0

Preliminary Datasheet RJH60D7DPM R07DS0176EJ0400600V - 50A - IGBT Rev.4.00Application: Inverter Dec 07, 2012Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer techno

Другие IGBT... NGTB40N65IHL2WG , NGTB45N60S1 , NGTB45N60S1WG , NGTB45N60S2 , NGTB45N60S2WG , NGTG35N65FL2 , NGTG35N65FL2WG , RJH60D7BDPQ-E0 , FGL60N100BNTD , IGW50N65F5 , IGW50N65H5 , IKW50N65F5 , IKW50N65H5 , IRG8P40N120KD , IRGP6650D , MMG40A120B6C , IRG7PH42UD1M .

 

 
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