All IGBT. RJH60D7DPQ-E0 Datasheet

 

RJH60D7DPQ-E0 Datasheet and Replacement


   Type Designator: RJH60D7DPQ-E0
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 300 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic|ⓘ - Maximum Collector Current: 90 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 46 nS
   Coesⓘ - Output Capacitance, typ: 160 pF
   Qgⓘ - Total Gate Charge, typ: 130 nC
   Package: TO247
      - IGBT Cross-Reference

 

RJH60D7DPQ-E0 Datasheet (PDF)

 ..1. Size:104K  renesas
 rjh60d7dpq-e0.pdf pdf_icon

RJH60D7DPQ-E0

Preliminary Datasheet RJH60D7DPQ-E0 R07DS0740EJ0100600V - 50A - IGBT Rev.1.00Application: Inverter Apr 19, 2012Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer tec

 5.1. Size:84K  renesas
 r07ds0176ej rjh60d7dpm.pdf pdf_icon

RJH60D7DPQ-E0

Preliminary Datasheet RJH60D7DPM R07DS0176EJ0200Silicon N Channel IGBT Rev.2.00Application: Inverter Nov 16, 2010Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer t

 5.2. Size:83K  renesas
 r07ds0165ej rjh60d7dpk.pdf pdf_icon

RJH60D7DPQ-E0

Preliminary Datasheet RJH60D7DPK R07DS0165EJ0300Silicon N Channel IGBT Rev.3.00Application: Inverter Nov 16, 2010Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer t

 5.3. Size:98K  renesas
 rjh60d7dpk.pdf pdf_icon

RJH60D7DPQ-E0

Preliminary Datasheet RJH60D7DPK R07DS0165EJ0400600V - 50A - IGBT Rev.4.00Application: Inverter Apr 19, 2012Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer techno

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Keywords - RJH60D7DPQ-E0 transistor datasheet

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