NGTB40N120FL Todos los transistores

 

NGTB40N120FL IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NGTB40N120FL

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 104 W

|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 40 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2 V @25℃

trⓘ - Tiempo de subida, typ: 41 nS

Coesⓘ - Capacitancia de salida, typ: 240 pF

Encapsulados: TO247

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NGTB40N120FL datasheet

 ..1. Size:193K  onsemi
 ngtb40n120fl.pdf pdf_icon

NGTB40N120FL

NGTB40N120FLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fast co-packaged

 0.1. Size:145K  onsemi
 ngtb40n120fl2wg.pdf pdf_icon

NGTB40N120FL

NGTB40N120FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft www.on

 0.2. Size:193K  onsemi
 ngtb40n120flwg.pdf pdf_icon

NGTB40N120FL

NGTB40N120FLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fast co-packaged

 0.3. Size:148K  onsemi
 ngtb40n120fl2.pdf pdf_icon

NGTB40N120FL

NGTB40N120FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft www.on

MOSTRAR MÁS

Otros transistores... IKW50N65H5 , IRG8P40N120KD , IRGP6650D , MMG40A120B6C , IRG7PH42UD1M , IRG7PG42UD , IRG7PH44K10D , MMG50S170B6EN , GT30F125 , NGTB40N120FLWG , RJH1CV7DPK , IRGP4760 , IRGP4760D , STGW25M120DF3 , STGWA25M120DF3 , NGTB30N120IHL , NGTB30N120IHLWG .

 

 

 

 

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