NGTB40N120FL IGBT. Datasheet pdf. Equivalent

   Type Designator: NGTB40N120FL
   Type: IGBT + Anti-Parallel Diode
   Marking Code: 40N120FL
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 104 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 40 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 41 nS
   Coesⓘ - Output Capacitance, typ: 240 pF
   Qgⓘ - Total Gate Charge, typ: 415 nC
   Package: TO247

NGTB40N120FL Transistor Equivalent Substitute - IGBT Cross-Reference Search

NGTB40N120FL Datasheet (PDF)

..1. Size:193K onsemi
ngtb40n120fl.pdf

NGTB40N120FLWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on state voltage and minimal switching loss. The IGBT iswell suited for UPS and solar applications. Incorporated into thedevice is a soft and fast co-packaged

0.1. Size:145K onsemi
ngtb40n120fl2wg.pdf

NGTB40N120FL2WGIGBT - Field Stop IIThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop II Trench construction, and provides superiorperformance in demanding switching applications, offering both lowon state voltage and minimal switching loss. The IGBT is well suitedfor UPS and solar applications. Incorporated into the device is a softwww.on

0.2. Size:193K onsemi
ngtb40n120flwg.pdf