Справочник IGBT. NGTB40N120FL

 

NGTB40N120FL Даташит. Аналоги. Параметры и характеристики.


   Наименование: NGTB40N120FL
   Тип транзистора: IGBT + Diode
   Маркировка: 40N120FL
   Тип управляющего канала: N
   Pc ⓘ - Максимальная рассеиваемая мощность: 104 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1200 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
   |Ic| ⓘ - Максимальный постоянный ток коллектора: 40 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 2 V @25℃
   |VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 6.5 V
   Tj ⓘ - Максимальная температура перехода: 150 ℃
   tr ⓘ - Время нарастания типовое: 41 nS
   Coesⓘ - Выходная емкость, типовая: 240 pF
   Qg ⓘ - Общий заряд затвора, typ: 415 nC
   Тип корпуса: TO247
 

 Аналог (замена) для NGTB40N120FL

   - подбор ⓘ IGBT транзистора по параметрам

 

NGTB40N120FL Datasheet (PDF)

 ..1. Size:193K  onsemi
 ngtb40n120fl.pdf pdf_icon

NGTB40N120FL

NGTB40N120FLWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on state voltage and minimal switching loss. The IGBT iswell suited for UPS and solar applications. Incorporated into thedevice is a soft and fast co-packaged

 0.1. Size:145K  onsemi
 ngtb40n120fl2wg.pdf pdf_icon

NGTB40N120FL

NGTB40N120FL2WGIGBT - Field Stop IIThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop II Trench construction, and provides superiorperformance in demanding switching applications, offering both lowon state voltage and minimal switching loss. The IGBT is well suitedfor UPS and solar applications. Incorporated into the device is a softwww.on

 0.2. Size:193K  onsemi
 ngtb40n120flwg.pdf pdf_icon

NGTB40N120FL

NGTB40N120FLWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on state voltage and minimal switching loss. The IGBT iswell suited for UPS and solar applications. Incorporated into thedevice is a soft and fast co-packaged

 0.3. Size:148K  onsemi
 ngtb40n120fl2.pdf pdf_icon

NGTB40N120FL

NGTB40N120FL2WGIGBT - Field Stop IIThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop II Trench construction, and provides superiorperformance in demanding switching applications, offering both lowon state voltage and minimal switching loss. The IGBT is well suitedfor UPS and solar applications. Incorporated into the device is a softwww.on

ПОКАЗАТЬ ЕЩЁ

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History: NGTG35N65FL2 | APT30GP60JDF1 | MMG100W120X6TC

 

 
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