IRGP4760 Todos los transistores

 

IRGP4760 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRGP4760

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 325 W

|Vce|ⓘ - Tensión máxima colector-emisor: 650 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 90 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.7 V @25℃

trⓘ - Tiempo de subida, typ: 60 nS

Coesⓘ - Capacitancia de salida, typ: 150 pF

Encapsulados: TO247

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IRGP4760 datasheet

 ..1. Size:833K  international rectifier
irgp4760.pdf pdf_icon

IRGP4760

IRGP4760PbF IRGP4760-EPbF Insulated Gate Bipolar Transistor VCES = 650V C IC = 60A, TC =100 C tSC 5.5 s, TJ(max) = 175 C G E E C C G G E VCE(ON) typ. = 1.7V @ IC = 48A IRGP4760PbF IRGP4760 EPbF n-channel TO 247AC TO 247AD Applications G C E Industrial Motor Drive Gate Collector Emitter UPS Solar Inverters Weldin

 0.1. Size:939K  international rectifier
irgp4760d.pdf pdf_icon

IRGP4760

IRGP4760DPbF IRGP4760D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 650V C IC = 60A, TC =100 C tSC 5.5 s, TJ(max) = 175 C G E E C C G G E VCE(ON) typ. = 1.7V @ IC = 48A IRGP4760DPbF IRGP4760D EPbF n-channel TO 247AC TO 247AD Applications G C E Industrial Motor Drive Gate Collector Emitter

 8.1. Size:837K  international rectifier
irgp4740d.pdf pdf_icon

IRGP4760

IRGP4740DPbF IRGP4740D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 650V C IC = 40A, TC =100 C tSC 5.5 s, TJ(max) = 175 C E E G C C G G VCE(ON) typ. = 1.7V @ IC = 24A E IRGP4740DPbF IRGP4740D-EPbF n-channel TO-247AC TO-247AD Applications Industrial Motor Drive G C E UPS Gate Collector Emitter Sola

 8.2. Size:678K  international rectifier
irgp4750d.pdf pdf_icon

IRGP4760

IRGP4750DPbF IRGP4750D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 650V C IC = 50A, TC =100 C tSC 5.5 s, TJ(max) = 175 C E E G C C G G VCE(ON) typ. = 1.7V @ IC = 35A E IRGP4750DPbF IRGP4750D EPbF n-channel Applications TO 247AC TO 247AD Industrial Motor Drive G C E UPS Gate Collector

Otros transistores... MMG40A120B6C , IRG7PH42UD1M , IRG7PG42UD , IRG7PH44K10D , MMG50S170B6EN , NGTB40N120FL , NGTB40N120FLWG , RJH1CV7DPK , XNF15N60T , IRGP4760D , STGW25M120DF3 , STGWA25M120DF3 , NGTB30N120IHL , NGTB30N120IHLWG , NGTB40N120IHL , NGTB40N120IHLWG , IRGP4063D1 .

 

 

 


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