IRGP4760 IGBT. Datasheet pdf. Equivalent
Type Designator: IRGP4760
Type of IGBT Channel: N-Channel
Maximum Power Dissipation (Pc), W: 325
Maximum Collector-Emitter Voltage |Vce|, V: 650
Collector-Emitter saturation Voltage |Vcesat|, V: 1.7
Maximum Gate-Emitter Voltage |Veg|, V: 20
Maximum Collector Current |Ic|, A: 90
Maximum Junction Temperature (Tj), °C: 175
Rise Time, nS: 60
Maximum Collector Capacity (Cc), pF: 150
Package: TO247
IRGP4760 Transistor Equivalent Substitute - IGBT Cross-Reference Search
IRGP4760 Datasheet (PDF)
0.1. irgp4760d.pdf Size:939K _international_rectifier
IRGP4760DPbF IRGP4760D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 650V C IC = 60A, TC =100°C tSC 5.5µs, TJ(max) = 175°C G E E C C G G E VCE(ON) typ. = 1.7V @ IC = 48A IRGP4760DPbF IRGP4760D‐EPbF n-channel TO‐247AC TO‐247AD Applications G C E • Industrial Motor Drive Gate Collector Emitter •
0.2. irgp4760.pdf Size:833K _international_rectifier
IRGP4760PbF IRGP4760-EPbF Insulated Gate Bipolar Transistor VCES = 650V C IC = 60A, TC =100°C tSC 5.5µs, TJ(max) = 175°C G E E C C G G E VCE(ON) typ. = 1.7V @ IC = 48A IRGP4760PbF IRGP4760‐EPbF n-channel TO‐247AC TO‐247AD Applications G C E • Industrial Motor Drive Gate Collector Emitter • UPS • Solar Inverters • Weldin
8.1. irgp4740d.pdf Size:837K _international_rectifier
IRGP4740DPbF IRGP4740D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 650V C IC = 40A, TC =100°C tSC ≥ 5.5µs, TJ(max) = 175°C E E G C C G G VCE(ON) typ. = 1.7V @ IC = 24A E IRGP4740DPbF IRGP4740D-EPbF n-channel TO-247AC TO-247AD Applications • Industrial Motor Drive G C E • UPS Gate Collector Emitter • Sola
8.2. irgp4790d.pdf Size:894K _international_rectifier
IRGP4790DPbF IRGP4790D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 650V C IC = 90A, TC =100°C tSC 5.5µs, TJ(max) = 175°C E E G C C G G VCE(ON) typ. = 1.7V @ IC = 75A E IRGP4790DPbF IRGP4790D‐EPbF n-channel Applications TO‐247AC TO‐247AD Industrial Motor Drive G C E UPS Gate Collector
8.3. irgp4790.pdf Size:796K _international_rectifier
IRGP4790PbF IRGP4790-EPbF Insulated Gate Bipolar Transistor VCES = 650V C IC = 90A, TC =100°C tSC 5.5µs, TJ(max) = 175°C E G E C C G G VCE(ON) typ. = 1.7V @ IC = 75A E n-channel IRGP4790PbF IRGP4790‐EPbF Applications TO‐247AC TO‐247AD Industrial Motor Drive G C E UPS Gate Collector Emitter Solar Inverters We
8.4. irgp4750d.pdf Size:678K _international_rectifier
IRGP4750DPbF IRGP4750D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 650V C IC = 50A, TC =100°C tSC 5.5µs, TJ(max) = 175°C E E G C C G G VCE(ON) typ. = 1.7V @ IC = 35A E IRGP4750DPbF IRGP4750D‐EPbF n-channel Applications TO‐247AC TO‐247AD Industrial Motor Drive G C E UPS Gate Collector
Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , 1MBH50D-060 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .



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