IRGP6660D Todos los transistores

 

IRGP6660D - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRGP6660D
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 330 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 600 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 95 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.65 V @25℃
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   trⓘ - Tiempo de subida, typ: 50 nS
   Coesⓘ - Capacitancia de salida, typ: 175 pF
   Paquete / Cubierta: TO247
     - Selección de transistores por parámetros

 

IRGP6660D Datasheet (PDF)

 ..1. Size:682K  international rectifier
 irgp6660d.pdf pdf_icon

IRGP6660D

IRGP6660DPbF IRGP6660D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C C C IC = 60A, TC =100C tSC 5s, TJ(max) = 175C GE E C G C G EVCE(ON) typ. = 1.7V @ IC = 48A IRGP6660DPbF IRGP6660D-EPbF n-channelTO-247AC TO-247AD Applications G C E Welding Gate Collector Emitter H Bridge Converters Feat

 8.1. Size:637K  international rectifier
 irgp6690dpbf irgp6690d-epbf.pdf pdf_icon

IRGP6660D

IRGP6690DPbF IRGP6690D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C C C IC = 90A, TC =100C tSC 5s, TJ(max) = 175C GE E C G C G EVCE(ON) typ. = 1.65V @ IC = 75A IRGP6690DPbF IRGP6690D-EPbF n-channelTO-247AC TO-247AD Applications G C E Welding Gate Collector Emitter H Bridge Converters Fea

 8.2. Size:688K  international rectifier
 irgp6650d.pdf pdf_icon

IRGP6660D

IRGP6650DPbF IRGP6650D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C C C IC = 50A, TC =100C E tSC 5s, TJ(max) = 175C GE C G C G EVCE(ON) typ. = 1.65V @ IC = 35A IRGP6650DPbFIRGP6650DEPbFn-channelTO247ACTO247ADApplications G C E Welding Gate Collector Emitter H Bridg

 8.3. Size:649K  international rectifier
 irgp6690d.pdf pdf_icon

IRGP6660D

IRGP6690DPbF IRGP6690D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C C C IC = 90A, TC =100C tSC 5s, TJ(max) = 175C GE E C G C G EVCE(ON) typ. = 1.65V @ IC = 75A IRGP6690DPbF IRGP6690D-EPbF n-channelTO-247AC TO-247AD Applications G C E Welding Gate Collector Emitter H Bridge Converters Fea

MOSTRAR MÁS

Otros transistores... STGW25M120DF3 , STGWA25M120DF3 , NGTB30N120IHL , NGTB30N120IHLWG , NGTB40N120IHL , NGTB40N120IHLWG , IRGP4063D1 , IRGP4660D , IHW15N120R3 , MMG50H120X6HN , MMG50S120B6HN , IKW50N60T , NGTB15N120IHR , NGTB15N120IHRWG , NGTB20N120IH , NGTB20N120IHWG , MMG150H160UX6TN .

History: JT030N065SED | IXSN35N120AU1 | SIGC03T60SE | IXBF20N300 | MSG15T120FPE | 2SH28 | IRG4BC30F

 

 
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