IRGP6660D Spec and Replacement, IGBT Equivalent Finder, Cross Reference

IRGP6660D Specs and Replacement

Type Designator: IRGP6660D

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 330 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 95 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.65 V @25℃

tr ⓘ - Rise Time, typ: 50 nS

Coesⓘ - Output Capacitance, typ: 175 pF

Package: TO247

IRGP6660D Substitution

- IGBT ⓘ Cross-Reference Search

IRGP6660D datasheet

..1. Size:682K international rectifier
irgp6660d.pdf pdf_icon

IRGP6660DPbF IRGP6660D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C C C IC = 60A, TC =100 C tSC 5 s, TJ(max) = 175 C G E E C G C G E VCE(ON) typ. = 1.7V @ IC = 48A IRGP6660DPbF IRGP6660D-EPbF n-channel TO-247AC TO-247AD Applications G C E Welding Gate Collector Emitter H Bridge Converters Feat... See More ⇒

8.1. Size:637K international rectifier
irgp6690dpbf irgp6690d-epbf.pdf pdf_icon

IRGP6690DPbF IRGP6690D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C C C IC = 90A, TC =100 C tSC 5 s, TJ(max) = 175 C G E E C G C G E VCE(ON) typ. = 1.65V @ IC = 75A IRGP6690DPbF IRGP6690D-EPbF n-channel TO-247AC TO-247AD Applications G C E Welding Gate Collector Emitter H Bridge Converters Fea... See More ⇒

8.2. Size:688K international rectifier
irgp6650d.pdf pdf_icon

IRGP6650DPbF IRGP6650D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C C C IC = 50A, TC =100 C E tSC 5 s, TJ(max) = 175 C G E C G C G E VCE(ON) typ. = 1.65V @ IC = 35A IRGP6650DPbF IRGP6650D EPbF n-channel TO 247AC TO 247AD Applications G C E Welding Gate Collector Emitter H Bridg... See More ⇒

8.3. Size:649K international rectifier
irgp6690d.pdf pdf_icon