IRGP6660D IGBT. Datasheet pdf. Equivalent
Type Designator: IRGP6660D
Type of IGBT Channel: N-Channel
Maximum Power Dissipation (Pc), W: 330
Maximum Collector-Emitter Voltage |Vce|, V: 600
Collector-Emitter saturation Voltage |Vcesat|, V: 1.65
Maximum Gate-Emitter Voltage |Veg|, V: 20
Maximum Collector Current |Ic|, A: 95
Maximum Junction Temperature (Tj), °C: 175
Rise Time, nS: 50
Maximum Collector Capacity (Cc), pF: 175
Package: TO247
IRGP6660D Transistor Equivalent Substitute - IGBT Cross-Reference Search
IRGP6660D IGBT. Datasheet pdf. Equivalent
Type Designator: IRGP6660D
Type of IGBT Channel: N-Channel
Maximum Power Dissipation (Pc), W: 330
Maximum Collector-Emitter Voltage |Vce|, V: 600
Collector-Emitter saturation Voltage |Vcesat|, V: 1.65
Maximum Gate-Emitter Voltage |Veg|, V: 20
Maximum Collector Current |Ic|, A: 95
Maximum Junction Temperature (Tj), °C: 175
Rise Time, nS: 50
Maximum Collector Capacity (Cc), pF: 175
Package: TO247
IRGP6660D Transistor Equivalent Substitute - IGBT Cross-Reference Search
IRGP6660D Datasheet (PDF)
0.1. irgp6660d.pdf 
Size:682K _international_rectifier
IRGP6660DPbF IRGP6660D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C C C IC = 60A, TC =100°C tSC ≥ 5µs, TJ(max) = 175°C G E E C G C G E VCE(ON) typ. = 1.7V @ IC = 48A IRGP6660DPbF IRGP6660D-EPbF n-channel TO-247AC TO-247AD Applications G C E • Welding Gate Collector Emitter • H Bridge Converters Feat
8.1. irgp6630d.pdf Size:699K _international_rectifier
IRGP6630DPbF IRGP6630D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C C C IC = 30A, TC =100°C E tSC 5µs, TJ(max) = 175°C G E C G C G E VCE(ON) typ. = 1.65V @ IC = 18A IRGP6630DPbF IRGP6630D‐EPbF n-channel TO‐247AC TO‐247AD Applications G C E Welding Gate Collector Emitter H Bridg
8.2. irgp6650d.pdf Size:688K _international_rectifier
IRGP6650DPbF IRGP6650D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C C C IC = 50A, TC =100°C E tSC 5µs, TJ(max) = 175°C G E C G C G E VCE(ON) typ. = 1.65V @ IC = 35A IRGP6650DPbF IRGP6650D‐EPbF n-channel TO‐247AC TO‐247AD Applications G C E Welding Gate Collector Emitter H Bridg
8.3. auirgp66524d0.pdf Size:976K _international_rectifier
AUIRGP66524D0 AUIRGF66524D0 AUTOMOTIVE GRADE INSULATED GATE BIPOLAR TRANSISTOR WITH ™ COOLiRIGBT ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V INOMINAL = 24A E Tsc 6µs, TJ(MAX) = 175°C G C E G C G E VCE(ON) typ. = 1.60V TO-247AC TO-247AD n-channel AUIRGP66524D0 AUIRGF66524D0 Applications G C E Air Conditioning Compressor Gate Collector E
8.4. irgp6690d.pdf Size:649K _international_rectifier
IRGP6690DPbF IRGP6690D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C C C IC = 90A, TC =100°C tSC ≥ 5µs, TJ(max) = 175°C G E E C G C G E VCE(ON) typ. = 1.65V @ IC = 75A IRGP6690DPbF IRGP6690D-EPbF n-channel TO-247AC TO-247AD Applications G C E • Welding Gate Collector Emitter • H Bridge Converters Fea
Datasheet: STGW25M120DF3 , STGWA25M120DF3 , NGTB30N120IHL , NGTB30N120IHLWG , NGTB40N120IHL , NGTB40N120IHLWG , IRGP4063D1 , IRGP4660D , IXGR48N60C3D1 , MMG50H120X6HN , MMG50S120B6HN , IKW50N60T , NGTB15N120IHR , NGTB15N120IHRWG , NGTB20N120IH , NGTB20N120IHWG , MMG150H160UX6TN .
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IGBT: MGD622 | GT50N324 | BT60N60ANF | 2PG011 | MBQ40T65FDSC | IGF40T120F | FGPF30N45TTU | FGH40T65SHDF_F155 | IXBT15N170 | IXBH9N160 |