All IGBT. IRGP6660D Datasheet

 

IRGP6660D IGBT. Datasheet pdf. Equivalent

Type Designator: IRGP6660D

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 330

Maximum Collector-Emitter Voltage |Vce|, V: 600

Collector-Emitter saturation Voltage |Vcesat|, V: 1.65

Maximum Gate-Emitter Voltage |Veg|, V: 20

Maximum Collector Current |Ic|, A: 95

Maximum Junction Temperature (Tj), °C: 175

Rise Time, nS: 50

Maximum Collector Capacity (Cc), pF: 175

Package: TO247

IRGP6660D Transistor Equivalent Substitute - IGBT Cross-Reference Search

IRGP6660D IGBT. Datasheet pdf. Equivalent

Type Designator: IRGP6660D

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 330

Maximum Collector-Emitter Voltage |Vce|, V: 600

Collector-Emitter saturation Voltage |Vcesat|, V: 1.65

Maximum Gate-Emitter Voltage |Veg|, V: 20

Maximum Collector Current |Ic|, A: 95

Maximum Junction Temperature (Tj), °C: 175

Rise Time, nS: 50

Maximum Collector Capacity (Cc), pF: 175

Package: TO247

IRGP6660D Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IRGP6660D Datasheet (PDF)

0.1. irgp6660d.pdf Size:682K _international_rectifier

IRGP6660D
IRGP6660D

 IRGP6660DPbF IRGP6660D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C C C IC = 60A, TC =100°C tSC ≥ 5µs, TJ(max) = 175°C G E E C G C G E VCE(ON) typ. = 1.7V @ IC = 48A IRGP6660DPbF IRGP6660D-EPbF n-channel TO-247AC TO-247AD Applications G C E • Welding Gate Collector Emitter • H Bridge Converters Feat

8.1. irgp6630d.pdf Size:699K _international_rectifier

IRGP6660D
IRGP6660D

IRGP6630DPbF IRGP6630D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C C  C IC = 30A, TC =100°C E tSC 5µs, TJ(max) = 175°C G E C G C G E VCE(ON) typ. = 1.65V @ IC = 18A IRGP6630DPbF IRGP6630D‐EPbF  n-channel TO‐247AC TO‐247AD  Applications G C E  Welding Gate Collector Emitter  H Bridg

8.2. irgp6650d.pdf Size:688K _international_rectifier

IRGP6660D
IRGP6660D

IRGP6650DPbF IRGP6650D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C C  C IC = 50A, TC =100°C E tSC 5µs, TJ(max) = 175°C G E C G C G E VCE(ON) typ. = 1.65V @ IC = 35A IRGP6650DPbF IRGP6650D‐EPbF  n-channel TO‐247AC TO‐247AD  Applications G C E  Welding Gate Collector Emitter  H Bridg

 8.3. auirgp66524d0.pdf Size:976K _international_rectifier

IRGP6660D
IRGP6660D

AUIRGP66524D0 AUIRGF66524D0 AUTOMOTIVE GRADE INSULATED GATE BIPOLAR TRANSISTOR WITH ™  COOLiRIGBT ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V INOMINAL = 24A E Tsc 6µs, TJ(MAX) = 175°C G C E G C G E VCE(ON) typ. = 1.60V TO-247AC TO-247AD n-channel AUIRGP66524D0 AUIRGF66524D0 Applications G C E  Air Conditioning Compressor Gate Collector E

8.4. irgp6690d.pdf Size:649K _international_rectifier

IRGP6660D
IRGP6660D

 IRGP6690DPbF IRGP6690D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C C C IC = 90A, TC =100°C tSC ≥ 5µs, TJ(max) = 175°C G E E C G C G E VCE(ON) typ. = 1.65V @ IC = 75A IRGP6690DPbF IRGP6690D-EPbF n-channel TO-247AC TO-247AD Applications G C E • Welding Gate Collector Emitter • H Bridge Converters Fea

Datasheet: STGW25M120DF3 , STGWA25M120DF3 , NGTB30N120IHL , NGTB30N120IHLWG , NGTB40N120IHL , NGTB40N120IHLWG , IRGP4063D1 , IRGP4660D , IXGR48N60C3D1 , MMG50H120X6HN , MMG50S120B6HN , IKW50N60T , NGTB15N120IHR , NGTB15N120IHRWG , NGTB20N120IH , NGTB20N120IHWG , MMG150H160UX6TN .

 

 
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