IHW30N120R3 Todos los transistores

 

IHW30N120R3 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IHW30N120R3

Código: H30R1203

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 349

Tensión colector-emisor (Vce): 1200

Voltaje de saturación colector-emisor (Vce sat): 1.55

Tensión emisor-compuerta (Veg): 20

Corriente del colector DC máxima (Ic): 60

Temperatura operativa máxima (Tj), °C: 175

Capacitancia de salida (Cc), pF: 68

Empaquetado / Estuche: TO247

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IHW30N120R3 Datasheet (PDF)

..1. ihw30n120r3.pdf Size:1983K _infineon

IHW30N120R3
IHW30N120R3

Resonant Switching SeriesReverse conducting IGBT with monolithic body diodeIHW30N120R3Data sheetIndustrial Power ControlIHW30N120R3Resonant Switching SeriesReverse conducting IGBT with monolithic body diodeCFeatures: Powerful monolithic body diode with low forward voltagedesigned for soft commutation only TRENCHSTOPTM technology offering:- very tight parameter d

4.1. ihw30n120r2.pdf Size:579K _infineon

IHW30N120R3
IHW30N120R3

IHW30N120R2 Resonant Switching Series Reverse Conducting IGBT with monolithic body diode CFeatures: Powerful monolithic body diode with very low forward voltage Body diode clamps negative voltages TM TrenchStop and Fieldstop technology for 1200V applications GEoffers : - very tight parameter distribution - high ruggedness, temperature stable behavior

4.2. ihw30n120r2 rev1 5g.pdf Size:360K _infineon

IHW30N120R3
IHW30N120R3

IHW30N120R2 Soft Switching Series Reverse Conducting IGBT with monolithic body diode CFeatures: Powerful monolithic Body Diode with very low forward voltage Body diode clamps negative voltages TrenchStop and Fieldstop technology for 1200 V applications GEoffers : - very tight parameter distribution - high ruggedness, temperature stable behavior NP

 7.1. ihw30n100t.pdf Size:313K _infineon

IHW30N120R3
IHW30N120R3

IHW30N100T Soft Switching Series q Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with anti-parallel diode Features: C 1.1V Forward voltage of antiparallel rectifier diode Specified for TJmax = 175C TrenchStop and Fieldstop technology for 1000 V applications GE offers : - very tight parameter distribution - high ruggedness, tem

7.2. ihw30n100r .pdf Size:324K _infineon

IHW30N120R3
IHW30N120R3

IHW30N100R Soft Switching Series q Reverse Conducting IGBT with monolithic body diode Features: C 1.5V Forward voltage of monolithic body Diode Full Current Rating of monolithic body Diode Specified for TJmax = 175C GE Trench and Fieldstop technology for 1000 V applications offers : - very tight parameter distribution - high ruggedness, temperature st

 7.3. ihw30n110r3.pdf Size:2166K _infineon

IHW30N120R3
IHW30N120R3

Induction Heating SeriesReverse conducting IGBT with monolithic body diodeIHW30N110R3Data sheetIndustrial Power ControlIHW30N110R3Induction Heating SeriesReverse conducting IGBT with monolithic body diodeCFeatures: Powerful monolithic body diode with low forward voltagedesigned for soft commutation only Very tight parameter distribution High ruggedness, tempe

7.4. ihw30n160r2 rev2 1g.pdf Size:391K _infineon

IHW30N120R3
IHW30N120R3

IHW30N160R2 Soft Switching Series TrenchStop Reverse Conducting (RC-)IGBT with monolithic body diode CFeatures: Powerful monolithic Body Diode with very low forward voltage Body diode clamps negative voltages Trench and Fieldstop technology for 1600 V applications offers : GE - very tight parameter distribution - high ruggedness, temperature stable behavior

 7.5. ihw30n100r.pdf Size:324K _infineon

IHW30N120R3
IHW30N120R3

IHW30N100R Soft Switching Series q Reverse Conducting IGBT with monolithic body diode Features: C 1.5V Forward voltage of monolithic body Diode Full Current Rating of monolithic body Diode Specified for TJmax = 175C GE Trench and Fieldstop technology for 1000 V applications offers : - very tight parameter distribution - high ruggedness, temperature st

7.6. ihw30n100t rev2 7.pdf Size:313K _infineon

IHW30N120R3
IHW30N120R3

IHW30N100T Soft Switching Series q Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with anti-parallel diode Features: C 1.1V Forward voltage of antiparallel rectifier diode Specified for TJmax = 175C TrenchStop and Fieldstop technology for 1000 V applications GE offers : - very tight parameter distribution - high ruggedness, tem

7.7. ihw30n160r2.pdf Size:391K _infineon

IHW30N120R3
IHW30N120R3

IHW30N160R2 Soft Switching Series TrenchStop Reverse Conducting (RC-)IGBT with monolithic body diode CFeatures: Powerful monolithic Body Diode with very low forward voltage Body diode clamps negative voltages Trench and Fieldstop technology for 1600 V applications offers : GE - very tight parameter distribution - high ruggedness, temperature stable behavior

7.8. ihw30n110r3 1 2.pdf Size:1646K _infineon

IHW30N120R3
IHW30N120R3

IGBTReverse conducting IGBT with monolithic body diodeIHW30N110R31100V TRENCHSTOPTM IH-Series for Soft Switching ApplicationsData sheetIndustrial & MultimarketIHW30N110R3TRENCHSTOPTM IH-Series for Soft Switching ApplicationsReverse conducting IGBT with monolithic body diodeCFeatures: Powerful monolithic body diode with low forward voltagedesigned for soft commutation

7.9. ihw30n135r3.pdf Size:1984K _infineon

IHW30N120R3
IHW30N120R3

Resonant Switching SeriesReverse conducting IGBT with monolithic body diodeIHW30N135R3Data sheetIndustrial Power ControlIHW30N135R3Resonant Switching SeriesReverse conducting IGBT with monolithic body diodeCFeatures: Offers new higher breakdown voltage to 1350V for improvedreliability Powerful monolithic body diode with low forward voltagedesigned for soft commu

Otros transistores... NGTB15N120IHRWG , NGTB20N120IH , NGTB20N120IHWG , MMG150H160UX6TN , MMG75H120X6TN , MMG75S120B6TN , MMG75W120X6TN , MMG75W120XB6TN , IRG7IC28U , IHW30N135R3 , IRG8P50N120KD , MMG100HB060H6EN , MMG50HB120H6UN , KGF40N120KDA , KGF75N60KDB , NGTB15N135IHR , MMG50J120U .

 

 
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