Справочник IGBT. IHW30N120R3

 

IHW30N120R3 Даташит. Аналоги. Параметры и характеристики.


   Наименование: IHW30N120R3
   Тип транзистора: IGBT
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 349 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1200 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 60 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.55 V @25℃
   Tjⓘ - Максимальная температура перехода: 175 ℃
   Coesⓘ - Выходная емкость, типовая: 68 pF
   Тип корпуса: TO247
     - подбор IGBT транзистора по параметрам

 

IHW30N120R3 Datasheet (PDF)

 ..1. Size:1950K  infineon
ihw30n120r3.pdfpdf_icon

IHW30N120R3

Resonant Switching SeriesReverse conducting IGBT with monolithic body diodeIHW30N120R3Data sheetIndustrial Power ControlIHW30N120R3Resonant Switching SeriesReverse conducting IGBT with monolithic body diodeCFeatures: Powerful monolithic body diode with low forward voltagedesigned for soft commutation only TRENCHSTOPTM technology offering:- very tight parameter d

 4.1. Size:1440K  infineon
ihw30n120r5.pdfpdf_icon

IHW30N120R3

IHW30N120R5Resonant Switching SeriesReverse Conducting IGBT with monolithic body diodeCFeatures: Powerful monolithic body diode with low forward voltagedesigned for soft commutation TRENCHSTOPTM technology offering:- very tight parameter distributionG- high ruggedness, temperature stable behaviorE- low VCEsat- easy parallel switching capability due to positive

 4.2. Size:579K  infineon
ihw30n120r2.pdfpdf_icon

IHW30N120R3

IHW30N120R2 Resonant Switching Series Reverse Conducting IGBT with monolithic body diode CFeatures: Powerful monolithic body diode with very low forward voltage Body diode clamps negative voltages TM TrenchStop and Fieldstop technology for 1200V applications GEoffers : - very tight parameter distribution - high ruggedness, temperature stable behavior

 4.3. Size:360K  infineon
ihw30n120r2 rev1 5g.pdfpdf_icon

IHW30N120R3

IHW30N120R2 Soft Switching Series Reverse Conducting IGBT with monolithic body diode CFeatures: Powerful monolithic Body Diode with very low forward voltage Body diode clamps negative voltages TrenchStop and Fieldstop technology for 1200 V applications GEoffers : - very tight parameter distribution - high ruggedness, temperature stable behavior NP

Другие IGBT... AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , IHW20N135R5 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .

History: TSG40N120CE | MMG75S120B6TN | IRGB4086 | SGL50N60RUFD | NGTB20N120IHR | MMG75W120XB6TN | IXBF12N300

 

 
Back to Top

 


 
.