All IGBT. IHW30N120R3 Datasheet

 

IHW30N120R3 Datasheet and Replacement


   Type Designator: IHW30N120R3
   Type: IGBT + Anti-Parallel Diode
   Marking Code: H30R1203
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 349 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 60 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.55 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.4 V
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   Coesⓘ - Output Capacitance, typ: 68 pF
   Qg ⓘ - Total Gate Charge, typ: 263 nC
   Package: TO247
 

 IHW30N120R3 substitution

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IHW30N120R3 Datasheet (PDF)

 ..1. Size:1950K  infineon
ihw30n120r3.pdf pdf_icon

IHW30N120R3

Resonant Switching SeriesReverse conducting IGBT with monolithic body diodeIHW30N120R3Data sheetIndustrial Power ControlIHW30N120R3Resonant Switching SeriesReverse conducting IGBT with monolithic body diodeCFeatures: Powerful monolithic body diode with low forward voltagedesigned for soft commutation only TRENCHSTOPTM technology offering:- very tight parameter d

 4.1. Size:1440K  infineon
ihw30n120r5.pdf pdf_icon

IHW30N120R3

IHW30N120R5Resonant Switching SeriesReverse Conducting IGBT with monolithic body diodeCFeatures: Powerful monolithic body diode with low forward voltagedesigned for soft commutation TRENCHSTOPTM technology offering:- very tight parameter distributionG- high ruggedness, temperature stable behaviorE- low VCEsat- easy parallel switching capability due to positive

 4.2. Size:579K  infineon
ihw30n120r2.pdf pdf_icon

IHW30N120R3

IHW30N120R2 Resonant Switching Series Reverse Conducting IGBT with monolithic body diode CFeatures: Powerful monolithic body diode with very low forward voltage Body diode clamps negative voltages TM TrenchStop and Fieldstop technology for 1200V applications GEoffers : - very tight parameter distribution - high ruggedness, temperature stable behavior

 4.3. Size:360K  infineon
ihw30n120r2 rev1 5g.pdf pdf_icon

IHW30N120R3

IHW30N120R2 Soft Switching Series Reverse Conducting IGBT with monolithic body diode CFeatures: Powerful monolithic Body Diode with very low forward voltage Body diode clamps negative voltages TrenchStop and Fieldstop technology for 1200 V applications GEoffers : - very tight parameter distribution - high ruggedness, temperature stable behavior NP

Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , CRG60T60AN3H , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .

History: IGB30N60H3

Keywords - IHW30N120R3 transistor datasheet

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