IRG8P50N120KD - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRG8P50N120KD
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 350 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 30 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 80 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.7 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 6.5 V
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 25 nS
Coesⓘ - Capacitancia de salida, typ: 200 pF
Qgⓘ - Carga total de la puerta, typ: 210 nC
Paquete / Cubierta: TO247
Búsqueda de reemplazo de IRG8P50N120KD - IGBT
IRG8P50N120KD Datasheet (PDF)
irg8p50n120kd.pdf
IRG8P50N120KDPbF IRG8P50N120KD-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1200V CIC = 50A, TC =100C tSC 10s, TJ(max) = 150C C E G E G C G EVCE(ON) typ. = 1.7V @ IC = 35A IRG8P50N120KDPbFIRG8P50N120KDEPbFn-channelTO247ACApplications TO247ADG C E Industrial Motor Drive Gate Collector Em
irg8p25n120kd.pdf
IRG8P25N120KDPbF IRG8P25N120KD-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1200V CIC = 25A, TC =100C E tSC 10s, TJ(max) = 150C E G C C G G EVCE(ON) typ. = 1.7V @ IC = 15A IRG8P25N120KDPbFIRG8P25N120KDEPbFn-channelTO247ACApplications TO247ADG C E Industrial Motor Drive Gate Collector
irg8p15n120kd.pdf
IRG8P15N120KDPbF IRG8P15N120KD-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1200V CIC = 15A, TC =100C E tSC 10s, TJ(max) = 150C E GC G G C EVCE(ON) typ. = 1.7V @ IC = 10A IRG8P15N120KDPbFIRG8P15N120KDEPbFn-channelTO247ACApplications TO247ADG C E Industrial Motor Drive Gate Collector E
irg8p08n120kd.pdf
IRG8B08N120KDPbF IRG8P08N120KDPbF IRG8P08N120KD-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1200V CIC = 8A, TC =100C tSC 10s, TJ(max) = 150C E C GE C E VCE(ON) typ. = 1.7V @ IC = 5A G C G G ETO-247AD TO-220AB TO-247AC IRG8P08N120KD-EPbF Applications IRG8B08N120KDPbF IRG8P08N120KDPbF n-channel Ind
irg8p40n120kd.pdf
IRG8P40N120KDPbF IRG8P40N120KD-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1200V CIC = 40A, TC =100C tSC 10s, TJ(max) = 150C E E GC G C G EVCE(ON) typ. = 1.7V @ IC = 25A IRG8P40N120KDPbFIRG8P40N120KDEPbFn-channelTO247ACTO247ADApplications G C E Industrial Motor Drive Gate Collector E
irg8p60n120kd.pdf
IRG8P60N120KDPbF IRG8P60N120KD-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1200V CIC = 60A, TC =100C tSC 10s, TJ(max) = 150C E GE C G G C EVCE(ON) typ. = 1.7V @ IC = 40A IRG8P60N120KDPbFIRG8P60N120KDEPbFn-channelTO247ACTO247ADApplications Industrial Motor Drive G C E UPS Gate
Otros transistores... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
Liste
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