All IGBT. IRG8P50N120KD Datasheet

 

IRG8P50N120KD IGBT. Datasheet pdf. Equivalent

Type Designator: IRG8P50N120KD

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 350

Maximum Collector-Emitter Voltage |Vce|, V: 1200

Collector-Emitter saturation Voltage |Vcesat|, V: 1.7

Maximum Gate-Emitter Voltage |Veg|, V: 30

Maximum Collector Current |Ic|, A: 80

Maximum Junction Temperature (Tj), °C: 150

Rise Time, nS: 25

Maximum Collector Capacity (Cc), pF: 200

Package: TO247

IRG8P50N120KD Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IRG8P50N120KD Datasheet (PDF)

1.1. irg8p50n120kd.pdf Size:615K _igbt_a

IRG8P50N120KD
IRG8P50N120KD

IRG8P50N120KDPbF IRG8P50N120KD-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1200V C IC = 50A, TC =100°C tSC 10µs, TJ(max) = 150°C C E G E G C G E VCE(ON) typ. = 1.7V @ IC = 35A IRG8P50N120KDPbF  IRG8P50N120KD‐EPbF  n-channel TO‐247AC  Applications TO‐247AD  G C E • Industrial Motor Drive Gate Collector Em

5.1. irg8p40n120kd.pdf Size:553K _igbt_a

IRG8P50N120KD
IRG8P50N120KD

IRG8P40N120KDPbF IRG8P40N120KD-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1200V C IC = 40A, TC =100°C tSC 10µs, TJ(max) = 150°C E E G C G C G E VCE(ON) typ. = 1.7V @ IC = 25A IRG8P40N120KDPbF  IRG8P40N120KD‐EPbF  n-channel TO‐247AC  TO‐247AD  Applications G C E • Industrial Motor Drive Gate Collector E

5.2. irg8p15n120kd.pdf Size:640K _igbt_a

IRG8P50N120KD
IRG8P50N120KD

IRG8P15N120KDPbF IRG8P15N120KD-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1200V C IC = 15A, TC =100°C E tSC 10µs, TJ(max) = 150°C E G C G G C E VCE(ON) typ. = 1.7V @ IC = 10A IRG8P15N120KDPbF  IRG8P15N120KD‐EPbF  n-channel TO‐247AC  Applications TO‐247AD  G C E • Industrial Motor Drive Gate Collector E

 5.3. irg8p08n120kd.pdf Size:659K _igbt_a

IRG8P50N120KD
IRG8P50N120KD

IRG8B08N120KDPbF IRG8P08N120KDPbF IRG8P08N120KD-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1200V C IC = 8A, TC =100°C tSC 10µs, TJ(max) = 150°C E C G E C E VCE(ON) typ. = 1.7V @ IC = 5A G C G G E TO-247AD TO-220AB TO-247AC IRG8P08N120KD-EPbF Applications IRG8B08N120KDPbF IRG8P08N120KDPbF n-channel • Ind

5.4. irg8p60n120kd.pdf Size:699K _igbt_a

IRG8P50N120KD
IRG8P50N120KD

IRG8P60N120KDPbF IRG8P60N120KD-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1200V C IC = 60A, TC =100°C tSC 10µs, TJ(max) = 150°C E G E C G G C E VCE(ON) typ. = 1.7V @ IC = 40A IRG8P60N120KDPbF  IRG8P60N120KD‐EPbF  n-channel TO‐247AC  TO‐247AD  Applications • Industrial Motor Drive G C E • UPS Gate

 5.5. irg8p25n120kd.pdf Size:654K _igbt_a

IRG8P50N120KD
IRG8P50N120KD

IRG8P25N120KDPbF IRG8P25N120KD-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1200V C IC = 25A, TC =100°C E tSC 10µs, TJ(max) = 150°C E G C C G G E VCE(ON) typ. = 1.7V @ IC = 15A IRG8P25N120KDPbF  IRG8P25N120KD‐EPbF  n-channel TO‐247AC  Applications TO‐247AD  G C E • Industrial Motor Drive Gate Collector

Datasheet: NGTB20N120IHWG , MMG150H160UX6TN , MMG75H120X6TN , MMG75S120B6TN , MMG75W120X6TN , MMG75W120XB6TN , IHW30N120R3 , IHW30N135R3 , GT60M303 , MMG100HB060H6EN , MMG50HB120H6UN , KGF40N120KDA , KGF75N60KDB , NGTB15N135IHR , MMG50J120U , STGW60H65DF , STGW60H65DRF .

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IGBT: RJP30H2A | GT50JR22 | IRGC16B60KB | IRGC16B120KB | IRGC15B120UB | IRGC15B120KB | IRGC100B60UB | IRGC100B60KB | IRGC100B120UB | IRGC100B120KB |

 

 

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