All IGBT. IRG8P50N120KD Datasheet

 

IRG8P50N120KD Datasheet and Replacement


   Type Designator: IRG8P50N120KD
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 350 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic|ⓘ - Maximum Collector Current: 80 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 25 nS
   Coesⓘ - Output Capacitance, typ: 200 pF
   Package: TO247
      - IGBT Cross-Reference

 

IRG8P50N120KD Datasheet (PDF)

 ..1. Size:615K  international rectifier
irg8p50n120kd.pdf pdf_icon

IRG8P50N120KD

IRG8P50N120KDPbF IRG8P50N120KD-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1200V CIC = 50A, TC =100C tSC 10s, TJ(max) = 150C C E G E G C G EVCE(ON) typ. = 1.7V @ IC = 35A IRG8P50N120KDPbFIRG8P50N120KDEPbFn-channelTO247ACApplications TO247ADG C E Industrial Motor Drive Gate Collector Em

 9.1. Size:654K  international rectifier
irg8p25n120kd.pdf pdf_icon

IRG8P50N120KD

IRG8P25N120KDPbF IRG8P25N120KD-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1200V CIC = 25A, TC =100C E tSC 10s, TJ(max) = 150C E G C C G G EVCE(ON) typ. = 1.7V @ IC = 15A IRG8P25N120KDPbFIRG8P25N120KDEPbFn-channelTO247ACApplications TO247ADG C E Industrial Motor Drive Gate Collector

 9.2. Size:640K  international rectifier
irg8p15n120kd.pdf pdf_icon

IRG8P50N120KD

IRG8P15N120KDPbF IRG8P15N120KD-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1200V CIC = 15A, TC =100C E tSC 10s, TJ(max) = 150C E GC G G C EVCE(ON) typ. = 1.7V @ IC = 10A IRG8P15N120KDPbFIRG8P15N120KDEPbFn-channelTO247ACApplications TO247ADG C E Industrial Motor Drive Gate Collector E

 9.3. Size:659K  international rectifier
irg8p08n120kd.pdf pdf_icon

IRG8P50N120KD

IRG8B08N120KDPbF IRG8P08N120KDPbF IRG8P08N120KD-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1200V CIC = 8A, TC =100C tSC 10s, TJ(max) = 150C E C GE C E VCE(ON) typ. = 1.7V @ IC = 5A G C G G ETO-247AD TO-220AB TO-247AC IRG8P08N120KD-EPbF Applications IRG8B08N120KDPbF IRG8P08N120KDPbF n-channel Ind

Datasheet: NGTB20N120IHWG , MMG150H160UX6TN , MMG75H120X6TN , MMG75S120B6TN , MMG75W120X6TN , MMG75W120XB6TN , IHW30N120R3 , IHW30N135R3 , SGT40N60NPFDPN , MMG100HB060H6EN , MMG50HB120H6UN , KGF40N120KDA , KGF75N60KDB , NGTB15N135IHR , MMG50J120U , STGW60H65DF , STGW60H65DRF .

History: MMG300D120B6UC | AOTF5B65M2

Keywords - IRG8P50N120KD transistor datasheet

 IRG8P50N120KD cross reference
 IRG8P50N120KD equivalent finder
 IRG8P50N120KD lookup
 IRG8P50N120KD substitution
 IRG8P50N120KD replacement

 

 
Back to Top

 


 
.