KGF75N60KDB Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: KGF75N60KDB  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 357 W

|Vce|ⓘ - Tensión máxima colector-emisor: 600 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 100 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.55 V @25℃

trⓘ - Tiempo de subida, typ: 50 nS

Coesⓘ - Capacitancia de salida, typ: 250 pF

Encapsulados: TO247

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KGF75N60KDB datasheet

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 kgf75n60kdb.pdf pdf_icon

KGF75N60KDB

SEMICONDUCTOR KGF75N60KDB TECHNICAL DATA General Description KEC Field Stop Trench IGBTs offer low switching losses, high energy efficiency and short circuit ruggedness. It is designed for applications such as motor control, uninterrupted power supplies(UPS), general inverters. FEATURES High speed switching High ruggedness, temperature stable behavior Short Circuit Withstand T

 7.1. Size:327K  kec
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KGF75N60KDB

SEMICONDUCTOR KGF75N65KDF TECHNICAL DATA General Description B KEC Field Stop Trench IGBTs offer low switching losses, high energy A O S K efficiency and short circuit ruggedness. It is designed for applications such as Power Factor Correction(PFC), Inverterized MWO, Welder, Uninterrupted Power Supplies(UPS) and General DIM MILLIMETERS _ + A 15.90 0.30 Converters. _ B 5.00 + 0

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