KGF75N60KDB Todos los transistores

 

KGF75N60KDB IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: KGF75N60KDB
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 357 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 600 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 100 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.55 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 50 nS
   Coesⓘ - Capacitancia de salida, typ: 250 pF
   Paquete / Cubierta: TO247
 

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KGF75N60KDB datasheet

 ..1. Size:1559K  kec
 kgf75n60kdb.pdf pdf_icon

KGF75N60KDB

SEMICONDUCTOR KGF75N60KDB TECHNICAL DATA General Description KEC Field Stop Trench IGBTs offer low switching losses, high energy efficiency and short circuit ruggedness. It is designed for applications such as motor control, uninterrupted power supplies(UPS), general inverters. FEATURES High speed switching High ruggedness, temperature stable behavior Short Circuit Withstand T

 7.1. Size:327K  kec
 kgf75n65kdf.pdf pdf_icon

KGF75N60KDB

SEMICONDUCTOR KGF75N65KDF TECHNICAL DATA General Description B KEC Field Stop Trench IGBTs offer low switching losses, high energy A O S K efficiency and short circuit ruggedness. It is designed for applications such as Power Factor Correction(PFC), Inverterized MWO, Welder, Uninterrupted Power Supplies(UPS) and General DIM MILLIMETERS _ + A 15.90 0.30 Converters. _ B 5.00 + 0

Otros transistores... MMG75W120X6TN , MMG75W120XB6TN , IHW30N120R3 , IHW30N135R3 , IRG8P50N120KD , MMG100HB060H6EN , MMG50HB120H6UN , KGF40N120KDA , CRG40T60AN3H , NGTB15N135IHR , MMG50J120U , STGW60H65DF , STGW60H65DRF , NGTB40N60FL2 , NGTB40N60FL2WG , NGTB40N65FL2 , MMG75S060B6EN .

 

 

 


 
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