All IGBT. KGF75N60KDB Datasheet

 

KGF75N60KDB Datasheet and Replacement


   Type Designator: KGF75N60KDB
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 357 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 100 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.55 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 50 nS
   Coesⓘ - Output Capacitance, typ: 250 pF
   Package: TO247
 

 KGF75N60KDB substitution

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KGF75N60KDB Datasheet (PDF)

 ..1. Size:1559K  kec
 kgf75n60kdb.pdf pdf_icon

KGF75N60KDB

SEMICONDUCTORKGF75N60KDBTECHNICAL DATAGeneral DescriptionKEC Field Stop Trench IGBTs offer low switching losses, high energy efficiencyand short circuit ruggedness.It is designed for applications such as motor control, uninterrupted powersupplies(UPS), general inverters.FEATURES High speed switchingHigh ruggedness, temperature stable behaviorShort Circuit Withstand T

 7.1. Size:327K  kec
 kgf75n65kdf.pdf pdf_icon

KGF75N60KDB

SEMICONDUCTORKGF75N65KDFTECHNICAL DATAGeneral DescriptionBKEC Field Stop Trench IGBTs offer low switching losses, high energy AOS Kefficiency and short circuit ruggedness.It is designed for applications such as Power Factor Correction(PFC),Inverterized MWO, Welder, Uninterrupted Power Supplies(UPS) and GeneralDIM MILLIMETERS_+A 15.90 0.30Converters._B5.00 + 0

Datasheet: MMG75W120X6TN , MMG75W120XB6TN , IHW30N120R3 , IHW30N135R3 , IRG8P50N120KD , MMG100HB060H6EN , MMG50HB120H6UN , KGF40N120KDA , SGT40N60NPFDPN , NGTB15N135IHR , MMG50J120U , STGW60H65DF , STGW60H65DRF , NGTB40N60FL2 , NGTB40N60FL2WG , NGTB40N65FL2 , MMG75S060B6EN .

Keywords - KGF75N60KDB transistor datasheet

 KGF75N60KDB cross reference
 KGF75N60KDB equivalent finder
 KGF75N60KDB lookup
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 KGF75N60KDB replacement

 

 
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