KGF75N60KDB IGBT. Datasheet pdf. Equivalent
Type Designator: KGF75N60KDB
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 357 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 100 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.55 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 7.5 V
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 50 nS
Coesⓘ - Output Capacitance, typ: 250 pF
Qgⓘ - Total Gate Charge, typ: 250 nC
Package: TO247
KGF75N60KDB Transistor Equivalent Substitute - IGBT Cross-Reference Search
KGF75N60KDB Datasheet (PDF)
kgf75n60kdb.pdf
SEMICONDUCTORKGF75N60KDBTECHNICAL DATAGeneral DescriptionKEC Field Stop Trench IGBTs offer low switching losses, high energy efficiencyand short circuit ruggedness.It is designed for applications such as motor control, uninterrupted powersupplies(UPS), general inverters.FEATURES High speed switchingHigh ruggedness, temperature stable behaviorShort Circuit Withstand T
kgf75n65kdf.pdf
SEMICONDUCTORKGF75N65KDFTECHNICAL DATAGeneral DescriptionBKEC Field Stop Trench IGBTs offer low switching losses, high energy AOS Kefficiency and short circuit ruggedness.It is designed for applications such as Power Factor Correction(PFC),Inverterized MWO, Welder, Uninterrupted Power Supplies(UPS) and GeneralDIM MILLIMETERS_+A 15.90 0.30Converters._B5.00 + 0
Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
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