NGTB40N60FL2WG Todos los transistores

 

NGTB40N60FL2WG IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NGTB40N60FL2WG
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 183 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 600 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 40 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.7 V @25℃
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   trⓘ - Tiempo de subida, typ: 40 nS
   Coesⓘ - Capacitancia de salida, typ: 179 pF
   Paquete / Cubierta: TO247
 

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NGTB40N60FL2WG datasheet

 ..1. Size:137K  onsemi
 ngtb40n60fl2wg.pdf pdf_icon

NGTB40N60FL2WG

NGTB40N60FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft http //

 2.1. Size:137K  onsemi
 ngtb40n60fl2.pdf pdf_icon

NGTB40N60FL2WG

NGTB40N60FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft http //

 3.1. Size:160K  onsemi
 ngtb40n60flwg.pdf pdf_icon

NGTB40N60FL2WG

NGTB40N60FLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. http //onsemi.com Features Low Saturation Voltage using Trench with Field Stop Technology 40 A, 600 V Low Switching Loss R

 5.1. Size:182K  onsemi
 ngtb40n60ihlwg.pdf pdf_icon

NGTB40N60FL2WG

NGTB40N60IHLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for half bridge resonant applications. Incorporated into the device is a soft and fast co-pa

MOSTRAR MÁS

Otros transistores... MMG50HB120H6UN , KGF40N120KDA , KGF75N60KDB , NGTB15N135IHR , MMG50J120U , STGW60H65DF , STGW60H65DRF , NGTB40N60FL2 , FGA60N65SMD , NGTB40N65FL2 , MMG75S060B6EN , STGW25H120DF2 , STGW25H120F2 , STGW25S120DF3 , STGW28IH125DF , STGW60H60DLFB , STGW60H65DFB .

 

 

 


 
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