NGTB40N60FL2WG Todos los transistores

 

NGTB40N60FL2WG - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NGTB40N60FL2WG
   Tipo de transistor: IGBT + Diode
   Código de marcado: 40N60FL2
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 183 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 600 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 40 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.7 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 6.5 V
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   trⓘ - Tiempo de subida, typ: 40 nS
   Coesⓘ - Capacitancia de salida, typ: 179 pF
   Qgⓘ - Carga total de la puerta, typ: 170 nC
   Paquete / Cubierta: TO247
 

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NGTB40N60FL2WG Datasheet (PDF)

 ..1. Size:137K  onsemi
 ngtb40n60fl2wg.pdf pdf_icon

NGTB40N60FL2WG

NGTB40N60FL2WGIGBT - Field Stop IIThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop II Trench construction, and provides superiorperformance in demanding switching applications, offering both lowon state voltage and minimal switching loss. The IGBT is well suitedfor UPS and solar applications. Incorporated into the device is a softhttp://

 2.1. Size:137K  onsemi
 ngtb40n60fl2.pdf pdf_icon

NGTB40N60FL2WG

NGTB40N60FL2WGIGBT - Field Stop IIThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop II Trench construction, and provides superiorperformance in demanding switching applications, offering both lowon state voltage and minimal switching loss. The IGBT is well suitedfor UPS and solar applications. Incorporated into the device is a softhttp://

 3.1. Size:160K  onsemi
 ngtb40n60flwg.pdf pdf_icon

NGTB40N60FL2WG

NGTB40N60FLWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Trench construction, and provides superior performancein demanding switching applications, offering both low on statevoltage and minimal switching loss.http://onsemi.comFeatures Low Saturation Voltage using Trench with Field Stop Technology40 A, 600 V Low Switching Loss R

 5.1. Size:182K  onsemi
 ngtb40n60ihlwg.pdf pdf_icon

NGTB40N60FL2WG

NGTB40N60IHLWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on state voltage and minimal switching loss. The IGBT iswell suited for half bridge resonant applications. Incorporated into thedevice is a soft and fast co-pa

MOSTRAR MÁS

Otros transistores... MMG50HB120H6UN , KGF40N120KDA , KGF75N60KDB , NGTB15N135IHR , MMG50J120U , STGW60H65DF , STGW60H65DRF , NGTB40N60FL2 , GT30F126 , NGTB40N65FL2 , MMG75S060B6EN , STGW25H120DF2 , STGW25H120F2 , STGW25S120DF3 , STGW28IH125DF , STGW60H60DLFB , STGW60H65DFB .

 

 
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