All IGBT. NGTB40N60FL2WG Datasheet

 

NGTB40N60FL2WG IGBT. Datasheet pdf. Equivalent

Type Designator: NGTB40N60FL2WG

Marking Code: 40N60FL2

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 183

Maximum Collector-Emitter Voltage |Vce|, V: 600

Collector-Emitter saturation Voltage |Vcesat|, V: 1.7

Maximum Gate-Emitter Voltage |Veg|, V: 20

Maximum Collector Current |Ic|, A: 40

Maximum Junction Temperature (Tj), °C: 175

Rise Time, nS: 40

Maximum Collector Capacity (Cc), pF: 179

Package: TO247

NGTB40N60FL2WG Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

NGTB40N60FL2WG Datasheet (PDF)

1.1. ngtb40n60ihlwg.pdf Size:182K _igbt

NGTB40N60FL2WG
NGTB40N60FL2WG

NGTB40N60IHLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for half bridge resonant applications. Incorporated into the device is a soft and fast co-pa

1.2. ngtb40n60l2.pdf Size:135K _igbt

NGTB40N60FL2WG
NGTB40N60FL2WG

NGTB40N60L2WG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. Features www.onsemi.com • Extremely Efficient Trench with Field Stop Technology • TJmax = 175°C 40 A, 600 V

 1.3. ngtb40n60fl2.pdf Size:137K _igbt

NGTB40N60FL2WG
NGTB40N60FL2WG

NGTB40N60FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft http://

1.4. ngtb40n60l2wg.pdf Size:135K _igbt

NGTB40N60FL2WG
NGTB40N60FL2WG

NGTB40N60L2WG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. Features www.onsemi.com • Extremely Efficient Trench with Field Stop Technology • TJmax = 175°C 40 A, 600 V

 1.5. ngtb40n60flwg.pdf Size:160K _igbt

NGTB40N60FL2WG
NGTB40N60FL2WG

NGTB40N60FLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. http://onsemi.com Features • Low Saturation Voltage using Trench with Field Stop Technology 40 A, 600 V • Low Switching Loss R

1.6. ngtb40n60fl2wg.pdf Size:137K _igbt

NGTB40N60FL2WG
NGTB40N60FL2WG

NGTB40N60FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft http://

Datasheet: MMG50HB120H6UN , KGF40N120KDA , KGF75N60KDB , NGTB15N135IHR , MMG50J120U , STGW60H65DF , STGW60H65DRF , NGTB40N60FL2 , RJH60F7ADPK , NGTB40N65FL2 , MMG75S060B6EN , STGW25H120DF2 , STGW25H120F2 , STGW25S120DF3 , STGW28IH125DF , STGW60H60DLFB , STGW60H65DFB .

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IGBT: IRGC16B60KB | IRGC16B120KB | IRGC15B120UB | IRGC15B120KB | IRGC100B60UB | IRGC100B60KB | IRGC100B120UB | IRGC100B120KB | IGC70T120T6RL | SIGC05T60SNC |