NGTB40N60FL2WG datasheet, аналоги, основные параметры

Наименование: NGTB40N60FL2WG  📄📄 

Тип транзистора: IGBT

Тип управляющего канала: N

Предельные значения

Pc ⓘ - Максимальная рассеиваемая мощность: 183 W

|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 600 V

|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V

|Ic| ⓘ - Максимальный постоянный ток коллектора: 40 A @25℃

Tj ⓘ - Максимальная температура перехода: 175 ℃

Электрические характеристики

|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.7 V @25℃

tr ⓘ - Время нарастания типовое: 40 nS

Coesⓘ - Выходная емкость, типовая: 179 pF

Тип корпуса: TO247

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 Аналог (замена) для NGTB40N60FL2WG

- подбор ⓘ IGBT транзистора по параметрам

 

NGTB40N60FL2WG даташит

 ..1. Size:137K  onsemi
 ngtb40n60fl2wg.pdf pdf_icon

NGTB40N60FL2WG

NGTB40N60FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft http //

 2.1. Size:137K  onsemi
 ngtb40n60fl2.pdf pdf_icon

NGTB40N60FL2WG

NGTB40N60FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft http //

 3.1. Size:160K  onsemi
 ngtb40n60flwg.pdf pdf_icon

NGTB40N60FL2WG

NGTB40N60FLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. http //onsemi.com Features Low Saturation Voltage using Trench with Field Stop Technology 40 A, 600 V Low Switching Loss R

 5.1. Size:182K  onsemi
 ngtb40n60ihlwg.pdf pdf_icon

NGTB40N60FL2WG

NGTB40N60IHLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for half bridge resonant applications. Incorporated into the device is a soft and fast co-pa

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... MMG50HB120H6UN, KGF40N120KDA, KGF75N60KDB, NGTB15N135IHR, MMG50J120U, STGW60H65DF, STGW60H65DRF, NGTB40N60FL2, SGT40N60NPFDPN, NGTB40N65FL2, MMG75S060B6EN, STGW25H120DF2, STGW25H120F2, STGW25S120DF3, STGW28IH125DF, STGW60H60DLFB, STGW60H65DFB