STGW60V60F Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: STGW60V60F  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 375 W

|Vce|ⓘ - Tensión máxima colector-emisor: 600 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 60 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.15 V @25℃

trⓘ - Tiempo de subida, typ: 20 nS

Coesⓘ - Capacitancia de salida, typ: 280 pF

Encapsulados: TO247

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STGW60V60F datasheet

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STGW60V60F

STGW60V60F Trench gate field-stop IGBT, V series 600 V, 60 A very high speed Datasheet - production data Features Maximum junction temperature TJ = 175 C Tail-less switching off VCE(sat) = 1.85 V (typ.) @ IC = 60 A Tight parameters distribution 3 Safe paralleling 2 1 Low thermal resistance Lead free package TO-247 Applications Photovoltaic in

 5.1. Size:1625K  st
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STGW60V60F

STGW60V60DF, STGWA60V60DF STGWT60V60DF Trench gate field-stop IGBT, V series 600 V, 60 A very high speed Datasheet - production data Features Maximum junction temperature TJ = 175 C Tail-less switching off VCE(sat) = 1.85 V (typ.) @ IC = 60 A 3 3 2 2 1 1 Tight parameter distribution TO-247 TO-247 long leads Safe paralleling TAB Low thermal resistan

 5.2. Size:1723K  st
stgw60v60df.pdf pdf_icon

STGW60V60F

STGW60V60DF, STGWT60V60DF Trench gate field-stop IGBT, V series 600 V, 60 A very high speed Datasheet - production data Features TAB Maximum junction temperature TJ = 175 C Tail-less switching off VCE(sat) = 1.85 V (typ.) @ IC = 60 A Tight parameters distribution 3 3 Safe paralleling 2 2 1 Low thermal resistance 1 Very fast soft recovery antipa

 8.1. Size:1574K  st
stgw60h65dfb.pdf pdf_icon

STGW60V60F

STGW60H65DFB, STGWA60H65DFB STGWT60H65DFB Trench gate field-stop IGBT, HB series 650 V, 60 A high speed Datasheet - production data Features TAB Maximum junction temperature TJ = 175 C High speed switching series Minimized tail current 3 3 2 2 VCE(sat) = 1.6 V (typ.) @ IC = 60 A 1 1 TO-3P TO-247 Tight parameters distribution Safe paralleling

Otros transistores... STGW25H120DF2, STGW25H120F2, STGW25S120DF3, STGW28IH125DF, STGW60H60DLFB, STGW60H65DFB, STGW60H65FB, STGW60V60DF, IRG7R313U, STGWA25H120DF2, STGWA25H120F2, STGWA25S120DF3, STGWA60H65DFB, STGWT28IH125DF, STGWT60H60DLFB, STGWT60H65DFB, STGWT60H65FB