STGW60V60F
- IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: STGW60V60F
Tipo de transistor: IGBT + Diode
Código de marcado: GW60V60F
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 375
W
|Vce|ⓘ - Tensión máxima colector-emisor: 600
V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20
V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 60
A
|VCEsat|ⓘ -
Voltaje de saturación colector-emisor, typ: 2.15
V @25℃
|VGEth|ⓘ -
Tensión máxima de puerta-umbral: 7
V
Tjⓘ -
Temperatura máxima de unión: 175
℃
trⓘ - Tiempo de subida, typ: 20
nS
Coesⓘ - Capacitancia de salida, typ: 280
pF
Qgⓘ - Carga total de la puerta, typ: 334
nC
Paquete / Cubierta:
TO247
Búsqueda de reemplazo de STGW60V60F
- IGBT
STGW60V60F
Datasheet (PDF)
..1. Size:1323K st
stgw60v60f.pdf 
STGW60V60FTrench gate field-stop IGBT, V series 600 V, 60 A very high speedDatasheet - production dataFeatures Maximum junction temperature: TJ = 175 C Tail-less switching off VCE(sat) = 1.85 V (typ.) @ IC = 60 A Tight parameters distribution3 Safe paralleling21 Low thermal resistance Lead free packageTO-247Applications Photovoltaic in
5.1. Size:1625K st
stgw60v60df stgwa60v60df stgwt60v60df.pdf
STGW60V60DF, STGWA60V60DF STGWT60V60DFTrench gate field-stop IGBT, V series 600 V, 60 A very high speedDatasheet - production dataFeatures Maximum junction temperature: TJ = 175 C Tail-less switching off VCE(sat) = 1.85 V (typ.) @ IC = 60 A332211 Tight parameter distributionTO-247TO-247 long leads Safe parallelingTAB Low thermal resistan
5.2. Size:1723K st
stgw60v60df.pdf
STGW60V60DF, STGWT60V60DFTrench gate field-stop IGBT, V series 600 V, 60 A very high speedDatasheet - production dataFeaturesTAB Maximum junction temperature: TJ = 175 C Tail-less switching off VCE(sat) = 1.85 V (typ.) @ IC = 60 A Tight parameters distribution33 Safe paralleling221 Low thermal resistance1 Very fast soft recovery antipa
8.1. Size:1574K st
stgw60h65dfb.pdf
STGW60H65DFB, STGWA60H65DFB STGWT60H65DFBTrench gate field-stop IGBT, HB series 650 V, 60 A high speedDatasheet - production dataFeaturesTAB Maximum junction temperature: TJ = 175 C High speed switching series Minimized tail current3322 VCE(sat) = 1.6 V (typ.) @ IC = 60 A11TO-3PTO-247 Tight parameters distribution Safe paralleling
8.2. Size:1494K st
stgw60h60dlfb.pdf
STGW60H60DLFB STGWT60H60DLFBTrench gate field-stop IGBT, HB series 600 V, 60 A high speedDatasheet - production dataFeatures Maximum junction temperature: TJ = 175 CTAB High speed switching series Minimized tail current VCE(sat) = 1.6 V (typ.) @ IC = 60 A Tight parameters distribution3231 Safe paralleling21 Low thermal resistance
8.3. Size:685K st
stgw60h65dfb stgwa60h65dfb stgwt60h65dfb.pdf
STGW60H65DFB, STGWA60H65DFB, STGWT60H65DFBDatasheetTrench gate field-stop 650 V, 60 A high speed HB series IGBTFeatures Maximum junction temperature: TJ = 175 C3 3 High speed switching series2 21 1 Minimized tail currentTO-247TO-247 long leads Low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC = 60 ATAB Tight parameter distribution Safe paral
8.4. Size:2061K st
stgw60h65drf.pdf
STGW60H65DRF60 A, 650 V field stop trench gate IGBT with Ultrafast diodeDatasheet - production dataApplications Photovoltaic inverters Uninterruptible power supply Welding Power factor correction High switching frequency converters321DescriptionTO-247This device is an IGBT developed using an advanced proprietary trench gate and field stop structure
8.5. Size:1229K st
stgw60h65fb.pdf
STGW60H65FB STGWT60H65FBTrench gate field-stop IGBT, HB series 650 V, 60 A high speedDatasheet - production dataFeatures Maximum junction temperature: TJ = 175 CTAB High speed switching series Minimized tail current VCE(sat) = 1.6 V (typ.) @ IC = 60 A Tight parameters distribution332 Safe paralleling211 Low thermal resistanceTO-247
8.6. Size:1508K st
stgw60h65f.pdf
STGW60H65F STGWT60H65F60 A, 650 V field stop trench gate IGBTDatasheet - production dataFeatures High speed switching Tight parameter distribution Safe paralleling Low thermal resistance 6 s short-circuit withstand time3322 Lead free package1 1ApplicationsTO-247TO-3P Photovoltaic inverters Uninterruptible power supply Weldin
8.7. Size:1493K st
stgw60h60dlfb stgwt60h60dlfb.pdf
STGW60H60DLFB STGWT60H60DLFBTrench gate field-stop IGBT, HB series 600 V, 60 A high speedDatasheet - production dataFeatures Maximum junction temperature: TJ = 175 CTAB High speed switching series Minimized tail current VCE(sat) = 1.6 V (typ.) @ IC = 60 A Tight parameters distribution3231 Safe paralleling21 Low thermal resistance
8.8. Size:1920K st
stgw60h65df.pdf
STGW60H65DF60 A, 650 V field stop trench gate IGBT with very fast diodeDatasheet - production dataFeatures High speed switching Tight parameters distribution Safe paralleling Low thermal resistance 6 s short-circuit withstand time32 Very fast soft recovery antiparallel diode1 Lead free packageTO-247Applications Photovoltaic inverters
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