All IGBT. STGW60V60F Datasheet

 

STGW60V60F IGBT. Datasheet pdf. Equivalent


   Type Designator: STGW60V60F
   Type: IGBT + Anti-Parallel Diode
   Marking Code: GW60V60F
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 375 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 60 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.15 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 7 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 20 nS
   Coesⓘ - Output Capacitance, typ: 280 pF
   Qgⓘ - Total Gate Charge, typ: 334 nC
   Package: TO247

 STGW60V60F Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

STGW60V60F Datasheet (PDF)

 ..1. Size:1323K  st
stgw60v60f.pdf

STGW60V60F
STGW60V60F

STGW60V60FTrench gate field-stop IGBT, V series 600 V, 60 A very high speedDatasheet - production dataFeatures Maximum junction temperature: TJ = 175 C Tail-less switching off VCE(sat) = 1.85 V (typ.) @ IC = 60 A Tight parameters distribution3 Safe paralleling21 Low thermal resistance Lead free packageTO-247Applications Photovoltaic in

 5.1. Size:1625K  st
stgw60v60df stgwa60v60df stgwt60v60df.pdf

STGW60V60F
STGW60V60F

STGW60V60DF, STGWA60V60DF STGWT60V60DFTrench gate field-stop IGBT, V series 600 V, 60 A very high speedDatasheet - production dataFeatures Maximum junction temperature: TJ = 175 C Tail-less switching off VCE(sat) = 1.85 V (typ.) @ IC = 60 A332211 Tight parameter distributionTO-247TO-247 long leads Safe parallelingTAB Low thermal resistan

 5.2. Size:1723K  st
stgw60v60df.pdf

STGW60V60F
STGW60V60F

STGW60V60DF, STGWT60V60DFTrench gate field-stop IGBT, V series 600 V, 60 A very high speedDatasheet - production dataFeaturesTAB Maximum junction temperature: TJ = 175 C Tail-less switching off VCE(sat) = 1.85 V (typ.) @ IC = 60 A Tight parameters distribution33 Safe paralleling221 Low thermal resistance1 Very fast soft recovery antipa

 8.1. Size:1574K  st
stgw60h65dfb.pdf

STGW60V60F
STGW60V60F

STGW60H65DFB, STGWA60H65DFB STGWT60H65DFBTrench gate field-stop IGBT, HB series 650 V, 60 A high speedDatasheet - production dataFeaturesTAB Maximum junction temperature: TJ = 175 C High speed switching series Minimized tail current3322 VCE(sat) = 1.6 V (typ.) @ IC = 60 A11TO-3PTO-247 Tight parameters distribution Safe paralleling

 8.2. Size:1494K  st
stgw60h60dlfb.pdf

STGW60V60F
STGW60V60F

STGW60H60DLFB STGWT60H60DLFBTrench gate field-stop IGBT, HB series 600 V, 60 A high speedDatasheet - production dataFeatures Maximum junction temperature: TJ = 175 CTAB High speed switching series Minimized tail current VCE(sat) = 1.6 V (typ.) @ IC = 60 A Tight parameters distribution3231 Safe paralleling21 Low thermal resistance

 8.3. Size:685K  st
stgw60h65dfb stgwa60h65dfb stgwt60h65dfb.pdf

STGW60V60F
STGW60V60F

STGW60H65DFB, STGWA60H65DFB, STGWT60H65DFBDatasheetTrench gate field-stop 650 V, 60 A high speed HB series IGBTFeatures Maximum junction temperature: TJ = 175 C3 3 High speed switching series2 21 1 Minimized tail currentTO-247TO-247 long leads Low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC = 60 ATAB Tight parameter distribution Safe paral

 8.4. Size:2061K  st
stgw60h65drf.pdf

STGW60V60F
STGW60V60F

STGW60H65DRF60 A, 650 V field stop trench gate IGBT with Ultrafast diodeDatasheet - production dataApplications Photovoltaic inverters Uninterruptible power supply Welding Power factor correction High switching frequency converters321DescriptionTO-247This device is an IGBT developed using an advanced proprietary trench gate and field stop structure

 8.5. Size:1229K  st
stgw60h65fb.pdf

STGW60V60F
STGW60V60F

STGW60H65FB STGWT60H65FBTrench gate field-stop IGBT, HB series 650 V, 60 A high speedDatasheet - production dataFeatures Maximum junction temperature: TJ = 175 CTAB High speed switching series Minimized tail current VCE(sat) = 1.6 V (typ.) @ IC = 60 A Tight parameters distribution332 Safe paralleling211 Low thermal resistanceTO-247

 8.6. Size:1508K  st
stgw60h65f.pdf

STGW60V60F
STGW60V60F

STGW60H65F STGWT60H65F60 A, 650 V field stop trench gate IGBTDatasheet - production dataFeatures High speed switching Tight parameter distribution Safe paralleling Low thermal resistance 6 s short-circuit withstand time3322 Lead free package1 1ApplicationsTO-247TO-3P Photovoltaic inverters Uninterruptible power supply Weldin

 8.7. Size:1493K  st
stgw60h60dlfb stgwt60h60dlfb.pdf

STGW60V60F
STGW60V60F

STGW60H60DLFB STGWT60H60DLFBTrench gate field-stop IGBT, HB series 600 V, 60 A high speedDatasheet - production dataFeatures Maximum junction temperature: TJ = 175 CTAB High speed switching series Minimized tail current VCE(sat) = 1.6 V (typ.) @ IC = 60 A Tight parameters distribution3231 Safe paralleling21 Low thermal resistance

 8.8. Size:1920K  st
stgw60h65df.pdf

STGW60V60F
STGW60V60F

STGW60H65DF60 A, 650 V field stop trench gate IGBT with very fast diodeDatasheet - production dataFeatures High speed switching Tight parameters distribution Safe paralleling Low thermal resistance 6 s short-circuit withstand time32 Very fast soft recovery antiparallel diode1 Lead free packageTO-247Applications Photovoltaic inverters

Datasheet: STGW25H120DF2 , STGW25H120F2 , STGW25S120DF3 , STGW28IH125DF , STGW60H60DLFB , STGW60H65DFB , STGW60H65FB , STGW60V60DF , YGW40N65F1 , STGWA25H120DF2 , STGWA25H120F2 , STGWA25S120DF3 , STGWA60H65DFB , STGWT28IH125DF , STGWT60H60DLFB , STGWT60H65DFB , STGWT60H65FB .

 

 
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