NGTG25N120FL2 Todos los transistores

 

NGTG25N120FL2 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NGTG25N120FL2
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 192 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 25 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2 V @25℃
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   trⓘ - Tiempo de subida, typ: 74 nS
   Coesⓘ - Capacitancia de salida, typ: 151 pF
   Paquete / Cubierta: TO247
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NGTG25N120FL2 Datasheet (PDF)

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NGTG25N120FL2

NGTG25N120FL2WGIGBT - Field Stop IIThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop II Trench construction, and provides superiorperformance in demanding switching applications, offering both lowon state voltage and minimal switching loss. The IGBT is well suitedfor UPS and solar applications.http://onsemi.comFeatures25 A, 1200 V

 0.1. Size:200K  onsemi
ngtg25n120fl2wg.pdf pdf_icon

NGTG25N120FL2

NGTG25N120FL2WGIGBT - Field Stop IIThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop II Trench construction, and provides superiorperformance in demanding switching applications, offering both lowon state voltage and minimal switching loss. The IGBT is well suitedfor UPS and solar applications.http://onsemi.comFeatures25 A, 1200 V

Otros transistores... NGTB30N120IHR , NGTB30N120IHRWG , NGTB40N120IHR , NGTB40N120IHRWG , NGTB25N120FL2 , NGTB25N120FL2WG , NGTB25N120S , NGTB25N120SWG , TGAN20N135FD , NGTG25N120FL2WG , NGTB20N135IHR , NGTB20N135IHRWG , NGTB30N135IHR , NGTB30N135IHRWG , NGTB40N135IHR , NGTB40N135IHRWG , STGW40H120DF2 .

History: OST30N65KTXF | BG150B12LY2-I | NGTB30N120IHL | OST160N65H5MF | YGP20N65T2 | IRGI4086 | IRGIB7B60KD

 

 
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