All IGBT. NGTG25N120FL2 Datasheet

 

NGTG25N120FL2 Datasheet and Replacement


   Type Designator: NGTG25N120FL2
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 192 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 25 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 74 nS
   Coesⓘ - Output Capacitance, typ: 151 pF
   Package: TO247
      - IGBT Cross-Reference

 

NGTG25N120FL2 Datasheet (PDF)

 ..1. Size:139K  onsemi
 ngtg25n120fl2.pdf pdf_icon

NGTG25N120FL2

NGTG25N120FL2WGIGBT - Field Stop IIThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop II Trench construction, and provides superiorperformance in demanding switching applications, offering both lowon state voltage and minimal switching loss. The IGBT is well suitedfor UPS and solar applications.http://onsemi.comFeatures25 A, 1200 V

 0.1. Size:200K  onsemi
 ngtg25n120fl2wg.pdf pdf_icon

NGTG25N120FL2

NGTG25N120FL2WGIGBT - Field Stop IIThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop II Trench construction, and provides superiorperformance in demanding switching applications, offering both lowon state voltage and minimal switching loss. The IGBT is well suitedfor UPS and solar applications.http://onsemi.comFeatures25 A, 1200 V

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: MMG300D120B6TC

Keywords - NGTG25N120FL2 transistor datasheet

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