STGW40M120DF3 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: STGW40M120DF3
Tipo de transistor: IGBT + Diode
Código de marcado: G40M120DF3
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 468 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 40 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.2 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 7 V
Tjⓘ - Temperatura máxima de unión: 175 ℃
trⓘ - Tiempo de subida, typ: 15 nS
Coesⓘ - Capacitancia de salida, typ: 275 pF
Qgⓘ - Carga total de la puerta, typ: 125 nC
Paquete / Cubierta: TO247
Búsqueda de reemplazo de STGW40M120DF3 - IGBT
STGW40M120DF3 Datasheet (PDF)
stgw40m120df3 stgwa40m120df3.pdf
STGW40M120DF3 STGWA40M120DF3Trench gate field-stop IGBT, M series 1200 V, 40 A low lossDatasheet - production dataFeatures 10 s of short-circuit withstand time VCE(sat) = 1.85 V (typ.) @ IC = 40 A Tight parameters distribution Safer paralleling Low thermal resistance3 Soft and fast recovery antiparallel diode21ApplicationsTO-247 Industria
stgw40m120df3.pdf
STGW40M120DF3 STGWA40M120DF3Trench gate field-stop IGBT, M series 1200 V, 40 A low lossDatasheet - production dataFeatures 10 s of short-circuit withstand time VCE(sat) = 1.85 V (typ.) @ IC = 40 A Tight parameters distribution Safer paralleling Low thermal resistance3 Soft and fast recovery antiparallel diode21ApplicationsTO-247 Industria
stgfw40h65fb stgw40h65fb stgwa40h65fb.pdf
STGFW40H65FB, STGW40H65FB, STGWA40H65FBDatasheetTrench gate field-stop 650 V, 40 A high speed HB series IGBTFeatures Maximum junction temperature: TJ = 175 C323 12 High speed switching series1TO-3PF TO-247 Minimized tail current Very low saturation voltage: VCE(sat) = 1.6 V (typ) @ IC = 40 A Safe paralleling321 Tight parameter distributio
stgw40h65dfb.pdf
STGW40H65DFBDatasheetTrench gate field-stop 650 V, 40 A high speed HB series IGBTFeatures Maximum junction temperature: TJ = 175 C High speed switching series Minimized tail current Low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC = 40 A32 Tight parameter distribution1 Safe parallelingTO-247 Positive VCE(sat) temperature coefficient Lo
stgw40nc60v.pdf
STGW40NC60VN-CHANNEL 50A - 600V - TO-247Very Fast PowerMESH IGBTTable 1: General Features Figure 1: PackageTYPE VCES VCE(sat) (Max) IC @25C @100CSTGW40NC60V 600 V
stgw40nc60w.pdf
STGW40NC60W40 A - 600 V - ultra fast IGBTFeatures Low CRES / CIES ratio (no cross conduction susceptibility) High frequency operationApplications321 High frequency inverters, UPSTO-247 Motor drivers HF, SMPS and PFC in both hard switch and resonant topologies Welding Induction heatingFigure 1. Internal schematic diagramDescriptionThis I
stgw40h120df2 stgwa40h120df2.pdf
STGW40H120DF2, STGWA40H120DF2 Trench gate field-stop IGBT, H series 1200 V, 40 A high speed Datasheet - production data Features Maximum junction temperature: T = 175 C J High speed switching series Minimized tail current V = 2.1 V (typ.) @ I = 40 A CE(sat) C 5 s minimum short circuit withstand time at T =150 C J Safe paralleling Very
stgw40v60dlf.pdf
STGW40V60DLF, STGWT40V60DLFTrench gate field-stop IGBT, V series 600 V, 40 A very high speedDatasheet - production dataFeatures Designed for soft commutation onlyTAB Maximum junction temperature: TJ = 175 C Tail-less switching off VCE(sat) = 1.8 V (typ.) @ IC = 40 A Tight parameters distribution3231 Safe paralleling21 Low thermal resis
stgw40nc60wd.pdf
STGW40NC60WD40 A - 600 V - ultra fast IGBTFeatures Low CRES / CIES ratio (no cross conduction susceptibility) IGBT co-packaged with ultra fast free-wheeling diode High frequency operation321TO-247Applications High frequency inverters, UPS Motor drivers HF, SMPS and PFC in both hard switch and resonant topologies WeldingFigure 1. Internal
stgw40nc60kd.pdf
STGW40NC60KD600 V, 40 A short-circuit rugged IGBTDatasheet - production dataFeatures Low on-voltage drop (VCE(sat)) Low Cres / Cies ratio (no cross conduction susceptibility) Short-circuit withstand time 10 s3 IGBT co-packaged with ultra fast free-wheeling 2diode1ApplicationsTO-247 High frequency inverters Motor driversFigure 1. Internal sch
stgw40n120kd.pdf
STGW40N120KDSTGWA40N120KD40 A, 1200 V short circuit rugged IGBT with Ultrafast diodeFeatures Low on-losses High current capability Low gate charge Short circuit withstand time 10 s IGBT co-packaged with Ultrafast free-wheeling 3diode21ApplicationsTO-247 Motor controlDescriptionFigure 1. Internal schematic diagramThis high voltage and short
stgb40v60f stgfw40v60f stgp40v60f stgw40v60f.pdf
STGB40V60F, STGFW40V60F STGP40V60F, STGW40V60FDatasheetTrench gate field-stop IGBT, V series 600 V, 40 A very high speedFeaturesTAB Maximum junction temperature: TJ = 175 C Tail-less switching off33122 1 VCE(sat) = 1.8 V (typ.) @ IC = 40 AD PAKTO-3PF Tight parameters distributionTAB Safe paralleling Low thermal resistance33221
stgw40h60dlfb.pdf
STGW40H60DLFB, STGWT40H60DLFBTrench gate field-stop IGBT, HB series 600 V, 40 A high speedDatasheet - production dataFeatures Maximum junction temperature: TJ = 175 CTAB High speed switching series Minimized tail current Low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC = 40 A323 Tight parameters distribution12 Safe paralleling1 L
stgw40v60f.pdf
STGB40V60F, STGFW40V60F, STGP40V60F, STGW40V60FTrench gate field-stop IGBT, V series 600 V, 40 A very high speedDatasheet - production dataFeaturesTAB Maximum junction temperature: TJ = 175 C111 Tail-less switching off31 VCE(sat) = 1.8 V (typ.) @ IC = 40 A3D2PAK 21 Tight parameters distributionTAB TO-3PF Safe paralleling Low thermal
stgfw40v60df stgw40v60df stgwt40v60df.pdf
STGFW40V60DF, STGW40V60DF, STGWT40V60DF Trench gate field-stop IGBT, V series 600 V, 40 A very high speed Datasheet - production data Features Maximum junction temperature: T = 175 C J Tail-less switching off V = 1.8 V (typ.) @ I = 40 A CE(sat) C Tight parameters distribution Safe paralleling Low thermal resistance Very fast soft recovery
stgw40h120f2.pdf
STGW40H120F2Trench gate field-stop IGBT, H series 1200 V, 40 A high speedDatasheet - production dataFeatures Maximum junction temperature: TJ = 175 C High speed switching series Minimized tail current VCE(sat) = 2.1 V (typ.) @ IC = 40 A3 5 s minimum short circuit withstand time at 2TJ=150 C1 Tight parameters distribution Safe paralleling
stgw40v60df.pdf
STGFW40V60DF, STGW40V60DF, STGWT40V60DFTrench gate field-stop IGBT, V series 600 V, 40 A very high speedDatasheet - production dataFeatures Maximum junction temperature: TJ = 175 C111 Tail-less switching off3 VCE(sat) = 1.8 V (typ.) @ IC = 40 A21 Tight parameters distributionTABTO-3PF Safe paralleling Low thermal resistance Very fast
stgw40h65fb.pdf
STGW40H65FB, STGFW40H65FB, STGWT40H65FBTrench gate field-stop IGBT, HB series 650 V, 40 A high speedDatasheet - production dataFeatures Maximum junction temperature: TJ = 175 C111 High speed switching series3 Minimized tail current21 Very low saturation voltage: VCE(sat) = 1.6 V TABTO-3PF(typ.) @ IC = 40 A Tight parameters distribution
stgw40h120df2.pdf
STGW40H120DF2,STGWA40H120DF2Trench gate field-stop IGBT, H series 1200 V, 40 A high speedDatasheet - production dataFeatures Maximum junction temperature: TJ = 175 C High speed switching series Minimized tail current VCE(sat) = 2.1 V (typ.) @ IC = 40 A 5 s minimum short circuit withstand time at 3 3TJ=150 C2 21 1 Safe parallelingTO-247TO
Otros transistores... NGTB20N135IHR , NGTB20N135IHRWG , NGTB30N135IHR , NGTB30N135IHRWG , NGTB40N135IHR , NGTB40N135IHRWG , STGW40H120DF2 , STGW40H120F2 , MGD623S , STGWA40H120DF2 , STGWA40M120DF3 , STGWA40S120DF3 , STGW80H65DFB , STGW80H65FB , STGW80V60DF , STGW80V60F , STGWA80H65DFB .
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2