All IGBT. STGW40M120DF3 Datasheet

 

STGW40M120DF3 Datasheet and Replacement


   Type Designator: STGW40M120DF3
   Type: IGBT + Anti-Parallel Diode
   Marking Code: G40M120DF3
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 468 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 40 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 7 V
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   tr ⓘ - Rise Time, typ: 15 nS
   Coesⓘ - Output Capacitance, typ: 275 pF
   Qg ⓘ - Total Gate Charge, typ: 125 nC
   Package: TO247
 

 STGW40M120DF3 substitution

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STGW40M120DF3 Datasheet (PDF)

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stgw40m120df3 stgwa40m120df3.pdf pdf_icon

STGW40M120DF3

STGW40M120DF3 STGWA40M120DF3Trench gate field-stop IGBT, M series 1200 V, 40 A low lossDatasheet - production dataFeatures 10 s of short-circuit withstand time VCE(sat) = 1.85 V (typ.) @ IC = 40 A Tight parameters distribution Safer paralleling Low thermal resistance3 Soft and fast recovery antiparallel diode21ApplicationsTO-247 Industria

 ..2. Size:1031K  st
stgw40m120df3.pdf pdf_icon

STGW40M120DF3

STGW40M120DF3 STGWA40M120DF3Trench gate field-stop IGBT, M series 1200 V, 40 A low lossDatasheet - production dataFeatures 10 s of short-circuit withstand time VCE(sat) = 1.85 V (typ.) @ IC = 40 A Tight parameters distribution Safer paralleling Low thermal resistance3 Soft and fast recovery antiparallel diode21ApplicationsTO-247 Industria

 8.1. Size:431K  st
stgfw40h65fb stgw40h65fb stgwa40h65fb.pdf pdf_icon

STGW40M120DF3

STGFW40H65FB, STGW40H65FB, STGWA40H65FBDatasheetTrench gate field-stop 650 V, 40 A high speed HB series IGBTFeatures Maximum junction temperature: TJ = 175 C323 12 High speed switching series1TO-3PF TO-247 Minimized tail current Very low saturation voltage: VCE(sat) = 1.6 V (typ) @ IC = 40 A Safe paralleling321 Tight parameter distributio

 8.2. Size:498K  st
stgw40h65dfb.pdf pdf_icon

STGW40M120DF3

STGW40H65DFBDatasheetTrench gate field-stop 650 V, 40 A high speed HB series IGBTFeatures Maximum junction temperature: TJ = 175 C High speed switching series Minimized tail current Low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC = 40 A32 Tight parameter distribution1 Safe parallelingTO-247 Positive VCE(sat) temperature coefficient Lo

Datasheet: NGTB20N135IHR , NGTB20N135IHRWG , NGTB30N135IHR , NGTB30N135IHRWG , NGTB40N135IHR , NGTB40N135IHRWG , STGW40H120DF2 , STGW40H120F2 , RJH60F5DPQ-A0 , STGWA40H120DF2 , STGWA40M120DF3 , STGWA40S120DF3 , STGW80H65DFB , STGW80H65FB , STGW80V60DF , STGW80V60F , STGWA80H65DFB .

History: IGC03R60D | F3L25R12W1T4-B27

Keywords - STGW40M120DF3 transistor datasheet

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