STGW40M120DF3 - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.
Наименование: STGW40M120DF3
Тип транзистора: IGBT + Diode
Маркировка: G40M120DF3
Тип управляющего канала: N
Pcⓘ - Максимальная рассеиваемая мощность: 468 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1200 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
|Ic|ⓘ - Максимальный постоянный ток коллектора: 40 A @25℃
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 2.2 V @25℃
|VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 7 V
Tjⓘ - Максимальная температура перехода: 175 ℃
trⓘ - Время нарастания типовое: 15 nS
Coesⓘ - Выходная емкость, типовая: 275 pF
Qgⓘ - Общий заряд затвора, typ: 125 nC
Тип корпуса: TO247
Аналог (замена) для STGW40M120DF3
STGW40M120DF3 Datasheet (PDF)
stgw40m120df3 stgwa40m120df3.pdf
STGW40M120DF3 STGWA40M120DF3Trench gate field-stop IGBT, M series 1200 V, 40 A low lossDatasheet - production dataFeatures 10 s of short-circuit withstand time VCE(sat) = 1.85 V (typ.) @ IC = 40 A Tight parameters distribution Safer paralleling Low thermal resistance3 Soft and fast recovery antiparallel diode21ApplicationsTO-247 Industria
stgw40m120df3.pdf
STGW40M120DF3 STGWA40M120DF3Trench gate field-stop IGBT, M series 1200 V, 40 A low lossDatasheet - production dataFeatures 10 s of short-circuit withstand time VCE(sat) = 1.85 V (typ.) @ IC = 40 A Tight parameters distribution Safer paralleling Low thermal resistance3 Soft and fast recovery antiparallel diode21ApplicationsTO-247 Industria
stgfw40h65fb stgw40h65fb stgwa40h65fb.pdf
STGFW40H65FB, STGW40H65FB, STGWA40H65FBDatasheetTrench gate field-stop 650 V, 40 A high speed HB series IGBTFeatures Maximum junction temperature: TJ = 175 C323 12 High speed switching series1TO-3PF TO-247 Minimized tail current Very low saturation voltage: VCE(sat) = 1.6 V (typ) @ IC = 40 A Safe paralleling321 Tight parameter distributio
stgw40h65dfb.pdf
STGW40H65DFBDatasheetTrench gate field-stop 650 V, 40 A high speed HB series IGBTFeatures Maximum junction temperature: TJ = 175 C High speed switching series Minimized tail current Low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC = 40 A32 Tight parameter distribution1 Safe parallelingTO-247 Positive VCE(sat) temperature coefficient Lo
stgw40nc60v.pdf
STGW40NC60VN-CHANNEL 50A - 600V - TO-247Very Fast PowerMESH IGBTTable 1: General Features Figure 1: PackageTYPE VCES VCE(sat) (Max) IC @25C @100CSTGW40NC60V 600 V
stgw40nc60w.pdf
STGW40NC60W40 A - 600 V - ultra fast IGBTFeatures Low CRES / CIES ratio (no cross conduction susceptibility) High frequency operationApplications321 High frequency inverters, UPSTO-247 Motor drivers HF, SMPS and PFC in both hard switch and resonant topologies Welding Induction heatingFigure 1. Internal schematic diagramDescriptionThis I
stgw40h120df2 stgwa40h120df2.pdf
STGW40H120DF2, STGWA40H120DF2 Trench gate field-stop IGBT, H series 1200 V, 40 A high speed Datasheet - production data Features Maximum junction temperature: T = 175 C J High speed switching series Minimized tail current V = 2.1 V (typ.) @ I = 40 A CE(sat) C 5 s minimum short circuit withstand time at T =150 C J Safe paralleling Very
stgw40v60dlf.pdf
STGW40V60DLF, STGWT40V60DLFTrench gate field-stop IGBT, V series 600 V, 40 A very high speedDatasheet - production dataFeatures Designed for soft commutation onlyTAB Maximum junction temperature: TJ = 175 C Tail-less switching off VCE(sat) = 1.8 V (typ.) @ IC = 40 A Tight parameters distribution3231 Safe paralleling21 Low thermal resis
stgw40nc60wd.pdf
STGW40NC60WD40 A - 600 V - ultra fast IGBTFeatures Low CRES / CIES ratio (no cross conduction susceptibility) IGBT co-packaged with ultra fast free-wheeling diode High frequency operation321TO-247Applications High frequency inverters, UPS Motor drivers HF, SMPS and PFC in both hard switch and resonant topologies WeldingFigure 1. Internal
stgw40nc60kd.pdf
STGW40NC60KD600 V, 40 A short-circuit rugged IGBTDatasheet - production dataFeatures Low on-voltage drop (VCE(sat)) Low Cres / Cies ratio (no cross conduction susceptibility) Short-circuit withstand time 10 s3 IGBT co-packaged with ultra fast free-wheeling 2diode1ApplicationsTO-247 High frequency inverters Motor driversFigure 1. Internal sch
stgw40n120kd.pdf
STGW40N120KDSTGWA40N120KD40 A, 1200 V short circuit rugged IGBT with Ultrafast diodeFeatures Low on-losses High current capability Low gate charge Short circuit withstand time 10 s IGBT co-packaged with Ultrafast free-wheeling 3diode21ApplicationsTO-247 Motor controlDescriptionFigure 1. Internal schematic diagramThis high voltage and short
stgb40v60f stgfw40v60f stgp40v60f stgw40v60f.pdf
STGB40V60F, STGFW40V60F STGP40V60F, STGW40V60FDatasheetTrench gate field-stop IGBT, V series 600 V, 40 A very high speedFeaturesTAB Maximum junction temperature: TJ = 175 C Tail-less switching off33122 1 VCE(sat) = 1.8 V (typ.) @ IC = 40 AD PAKTO-3PF Tight parameters distributionTAB Safe paralleling Low thermal resistance33221
stgw40h60dlfb.pdf
STGW40H60DLFB, STGWT40H60DLFBTrench gate field-stop IGBT, HB series 600 V, 40 A high speedDatasheet - production dataFeatures Maximum junction temperature: TJ = 175 CTAB High speed switching series Minimized tail current Low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC = 40 A323 Tight parameters distribution12 Safe paralleling1 L
stgw40v60f.pdf
STGB40V60F, STGFW40V60F, STGP40V60F, STGW40V60FTrench gate field-stop IGBT, V series 600 V, 40 A very high speedDatasheet - production dataFeaturesTAB Maximum junction temperature: TJ = 175 C111 Tail-less switching off31 VCE(sat) = 1.8 V (typ.) @ IC = 40 A3D2PAK 21 Tight parameters distributionTAB TO-3PF Safe paralleling Low thermal
stgfw40v60df stgw40v60df stgwt40v60df.pdf
STGFW40V60DF, STGW40V60DF, STGWT40V60DF Trench gate field-stop IGBT, V series 600 V, 40 A very high speed Datasheet - production data Features Maximum junction temperature: T = 175 C J Tail-less switching off V = 1.8 V (typ.) @ I = 40 A CE(sat) C Tight parameters distribution Safe paralleling Low thermal resistance Very fast soft recovery
stgw40h120f2.pdf
STGW40H120F2Trench gate field-stop IGBT, H series 1200 V, 40 A high speedDatasheet - production dataFeatures Maximum junction temperature: TJ = 175 C High speed switching series Minimized tail current VCE(sat) = 2.1 V (typ.) @ IC = 40 A3 5 s minimum short circuit withstand time at 2TJ=150 C1 Tight parameters distribution Safe paralleling
stgw40v60df.pdf
STGFW40V60DF, STGW40V60DF, STGWT40V60DFTrench gate field-stop IGBT, V series 600 V, 40 A very high speedDatasheet - production dataFeatures Maximum junction temperature: TJ = 175 C111 Tail-less switching off3 VCE(sat) = 1.8 V (typ.) @ IC = 40 A21 Tight parameters distributionTABTO-3PF Safe paralleling Low thermal resistance Very fast
stgw40h65fb.pdf
STGW40H65FB, STGFW40H65FB, STGWT40H65FBTrench gate field-stop IGBT, HB series 650 V, 40 A high speedDatasheet - production dataFeatures Maximum junction temperature: TJ = 175 C111 High speed switching series3 Minimized tail current21 Very low saturation voltage: VCE(sat) = 1.6 V TABTO-3PF(typ.) @ IC = 40 A Tight parameters distribution
stgw40h120df2.pdf
STGW40H120DF2,STGWA40H120DF2Trench gate field-stop IGBT, H series 1200 V, 40 A high speedDatasheet - production dataFeatures Maximum junction temperature: TJ = 175 C High speed switching series Minimized tail current VCE(sat) = 2.1 V (typ.) @ IC = 40 A 5 s minimum short circuit withstand time at 3 3TJ=150 C2 21 1 Safe parallelingTO-247TO
Другие IGBT... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
Список транзисторов
Обновления
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2