STGW80H65DFB - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: STGW80H65DFB
Tipo de transistor: IGBT + Diode
Código de marcado: GW80H65DFB
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 469 W
|Vce|ⓘ - Tensión máxima colector-emisor: 650 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 80 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.8 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 7 V
Tjⓘ - Temperatura máxima de unión: 175 ℃
trⓘ - Tiempo de subida, typ: 52 nS
Coesⓘ - Capacitancia de salida, typ: 385 pF
Qgⓘ - Carga total de la puerta, typ: 414 nC
Paquete / Cubierta: TO247
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STGW80H65DFB Datasheet (PDF)
stgw80h65dfb.pdf
STGY80H65DFB, STGW80H65DFB, STGWA80H65DFB STGWT80H65DFBTrench gate field-stop IGBT, HB series 650 V, 80 A high speedDatasheet - production dataFeatures Maximum junction temperature: TJ = 175 C High speed switching series3 Minimized tail current32211 VCE(sat) = 1.6 V (typ.) @ IC = 80 AMax247 TO-247 Tight parameter distributionTAB Safe par
stgw80h65dfb stgwt80h65dfb.pdf
STGW80H65DFB, STGWT80H65DFBDatasheetTrench gate field-stop 650 V, 80 A high speed HB series IGBTFeatures Maximum junction temperature: TJ = 175 CTAB High speed switching series Minimized tail current323 Low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC = 80 A121 Tight parameter distributionTO-247TO-3P Safe paralleling Positive VCE(s
stgw80h65fb.pdf
STGW80H65FB, STGWA80H65FB, STGWT80H65FBTrench gate field-stop IGBT, HB series 650 V, 80 A high speedDatasheet - production dataFeatures Maximum junction temperature: TJ = 175 CTAB High speed switching series Minimized tail current VCE(sat) = 1.6 V (typ.) @ IC = 80 A3 3 Tight parameter distribution2211 Safe parallelingTO-3PTO-247 Low
stgw80v60f.pdf
STGFW80V60F, STGW80V60F, STGWT80V60FTrench gate field-stop IGBT, V series 600 V, 80 A very high speedDatasheet - production dataFeatures Maximum junction temperature: TJ = 175 C111 Tail-less switching off3 VCE(sat) = 1.85 V (typ.) @ IC = 80 A21 Tight parameters distributionTABTO-3PF Safe paralleling Low thermal resistance33Applicati
stgw80v60df.pdf
STGW80V60DF STGWT80V60DFTrench gate field-stop IGBT, V series 600 V, 80 A very high speedDatasheet - production dataFeaturesTAB Maximum junction temperature: TJ = 175 C Tail-less switching off VCE(sat) = 1.85 V (typ.) @ IC = 80 A Tight parameters distribution3 Safe paralleling3221 Low thermal resistance1 Very fast soft recovery antipa
stgw80v60df stgwt80v60df.pdf
STGW80V60DF STGWT80V60DFTrench gate field-stop IGBT, V series 600 V, 80 A very high speedDatasheet - production dataFeaturesTAB Maximum junction temperature: TJ = 175 C Tail-less switching off VCE(sat) = 1.85 V (typ.) @ IC = 80 A Tight parameters distribution3 Safe paralleling3221 Low thermal resistance1 Very fast soft recovery antipa
Otros transistores... NGTB40N135IHR , NGTB40N135IHRWG , STGW40H120DF2 , STGW40H120F2 , STGW40M120DF3 , STGWA40H120DF2 , STGWA40M120DF3 , STGWA40S120DF3 , GT30F125 , STGW80H65FB , STGW80V60DF , STGW80V60F , STGWA80H65DFB , STGWA80H65FB , STGWT80H65DFB , STGWT80H65FB , STGWT80V60DF .
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