All IGBT. STGW80H65DFB Datasheet

 

STGW80H65DFB IGBT. Datasheet pdf. Equivalent


   Type Designator: STGW80H65DFB
   Type: IGBT + Anti-Parallel Diode
   Marking Code: GW80H65DFB
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 469
   Maximum Collector-Emitter Voltage |Vce|, V: 650
   Maximum Gate-Emitter Voltage |Vge|, V: 20
   Maximum Collector Current |Ic| @25℃, A: 80
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.8
   Maximum G-E Threshold Voltag |VGE(th)|, V: 7
   Maximum Junction Temperature (Tj), ℃: 175
   Rise Time (tr), typ, nS: 52
   Collector Capacity (Cc), typ, pF: 385
   Total Gate Charge (Qg), typ, nC: 414
   Package: TO247

 STGW80H65DFB Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

STGW80H65DFB Datasheet (PDF)

 ..1. Size:1459K  st
 stgw80h65dfb.pdf

STGW80H65DFB STGW80H65DFB

STGY80H65DFB, STGW80H65DFB, STGWA80H65DFB STGWT80H65DFBTrench gate field-stop IGBT, HB series 650 V, 80 A high speedDatasheet - production dataFeatures Maximum junction temperature: TJ = 175 C High speed switching series3 Minimized tail current32211 VCE(sat) = 1.6 V (typ.) @ IC = 80 AMax247 TO-247 Tight parameter distributionTAB Safe par

 ..2. Size:663K  st
 stgw80h65dfb stgwt80h65dfb.pdf

STGW80H65DFB STGW80H65DFB

STGW80H65DFB, STGWT80H65DFBDatasheetTrench gate field-stop 650 V, 80 A high speed HB series IGBTFeatures Maximum junction temperature: TJ = 175 CTAB High speed switching series Minimized tail current323 Low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC = 80 A121 Tight parameter distributionTO-247TO-3P Safe paralleling Positive VCE(s

 5.1. Size:1471K  st
 stgw80h65fb.pdf

STGW80H65DFB STGW80H65DFB

STGW80H65FB, STGWA80H65FB, STGWT80H65FBTrench gate field-stop IGBT, HB series 650 V, 80 A high speedDatasheet - production dataFeatures Maximum junction temperature: TJ = 175 CTAB High speed switching series Minimized tail current VCE(sat) = 1.6 V (typ.) @ IC = 80 A3 3 Tight parameter distribution2211 Safe parallelingTO-3PTO-247 Low

 8.1. Size:1643K  st
 stgw80v60f.pdf

STGW80H65DFB STGW80H65DFB

STGFW80V60F, STGW80V60F, STGWT80V60FTrench gate field-stop IGBT, V series 600 V, 80 A very high speedDatasheet - production dataFeatures Maximum junction temperature: TJ = 175 C111 Tail-less switching off3 VCE(sat) = 1.85 V (typ.) @ IC = 80 A21 Tight parameters distributionTABTO-3PF Safe paralleling Low thermal resistance33Applicati

 8.2. Size:1592K  st
 stgw80v60df.pdf

STGW80H65DFB STGW80H65DFB

STGW80V60DF STGWT80V60DFTrench gate field-stop IGBT, V series 600 V, 80 A very high speedDatasheet - production dataFeaturesTAB Maximum junction temperature: TJ = 175 C Tail-less switching off VCE(sat) = 1.85 V (typ.) @ IC = 80 A Tight parameters distribution3 Safe paralleling3221 Low thermal resistance1 Very fast soft recovery antipa

 8.3. Size:1562K  st
 stgw80v60df stgwt80v60df.pdf

STGW80H65DFB STGW80H65DFB

STGW80V60DF STGWT80V60DFTrench gate field-stop IGBT, V series 600 V, 80 A very high speedDatasheet - production dataFeaturesTAB Maximum junction temperature: TJ = 175 C Tail-less switching off VCE(sat) = 1.85 V (typ.) @ IC = 80 A Tight parameters distribution3 Safe paralleling3221 Low thermal resistance1 Very fast soft recovery antipa

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT45F122 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
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