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IRGP6690D - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRGP6690D

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 483

Tensión colector-emisor (Vce): 600

Voltaje de saturación colector-emisor (Vce sat): 1.65

Tensión emisor-compuerta (Veg): 20

Corriente del colector DC máxima (Ic): 140

Temperatura operativa máxima (Tj), °C: 175

Tiempo de elevación: 86

Capacitancia de salida (Cc), pF: 270

Empaquetado / Estuche: TO247

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IRGP6690D Datasheet (PDF)

1.1. irgp6690d.pdf Size:649K _igbt

IRGP6690D
IRGP6690D

 IRGP6690DPbF IRGP6690D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C C C IC = 90A, TC =100°C tSC ≥ 5µs, TJ(max) = 175°C G E E C G C G E VCE(ON) typ. = 1.65V @ IC = 75A IRGP6690DPbF IRGP6690D-EPbF n-channel TO-247AC TO-247AD Applications G C E • Welding Gate Collector Emitter • H Bridge Converters Fea

4.1. irgp6630d.pdf Size:699K _igbt

IRGP6690D
IRGP6690D

IRGP6630DPbF IRGP6630D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C C  C IC = 30A, TC =100°C E tSC 5µs, TJ(max) = 175°C G E C G C G E VCE(ON) typ. = 1.65V @ IC = 18A IRGP6630DPbF IRGP6630D‐EPbF  n-channel TO‐247AC TO‐247AD  Applications G C E  Welding Gate Collector Emitter  H Bridg

4.2. irgp6650d.pdf Size:688K _igbt

IRGP6690D
IRGP6690D

IRGP6650DPbF IRGP6650D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C C  C IC = 50A, TC =100°C E tSC 5µs, TJ(max) = 175°C G E C G C G E VCE(ON) typ. = 1.65V @ IC = 35A IRGP6650DPbF IRGP6650D‐EPbF  n-channel TO‐247AC TO‐247AD  Applications G C E  Welding Gate Collector Emitter  H Bridg

 4.3. irgp6660d.pdf Size:682K _igbt

IRGP6690D
IRGP6690D

 IRGP6660DPbF IRGP6660D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C C C IC = 60A, TC =100°C tSC ≥ 5µs, TJ(max) = 175°C G E E C G C G E VCE(ON) typ. = 1.7V @ IC = 48A IRGP6660DPbF IRGP6660D-EPbF n-channel TO-247AC TO-247AD Applications G C E • Welding Gate Collector Emitter • H Bridge Converters Feat

4.4. auirgp66524d0.pdf Size:976K _igbt_a

IRGP6690D
IRGP6690D

AUIRGP66524D0 AUIRGF66524D0 AUTOMOTIVE GRADE INSULATED GATE BIPOLAR TRANSISTOR WITH ™  COOLiRIGBT ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V INOMINAL = 24A E Tsc 6µs, TJ(MAX) = 175°C G C E G C G E VCE(ON) typ. = 1.60V TO-247AC TO-247AD n-channel AUIRGP66524D0 AUIRGF66524D0 Applications G C E  Air Conditioning Compressor Gate Collector E

Otros transistores... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , 1MBH50D-060 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
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