IRGP6690D Todos los transistores

Introduzca al menos 3 números o letras

IRGP6690D - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRGP6690D

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 483

Tensión colector-emisor (Vce): 600

Voltaje de saturación colector-emisor (Vce sat): 1.65

Tensión emisor-compuerta (Veg): 20

Corriente del colector DC máxima (Ic): 140

Temperatura operativa máxima (Tj), °C: 175

Tiempo de elevación: 86

Capacitancia de salida (Cc), pF: 270

Empaquetado / Estuche: TO247

Búsqueda de reemplazo de IRGP6690D - IGBT

 

IRGP6690D Datasheet (PDF)

1.1. irgp6690d.pdf Size:649K _igbt

IRGP6690D
IRGP6690D

 IRGP6690DPbF IRGP6690D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C C C IC = 90A, TC =100°C tSC ≥ 5µs, TJ(max) = 175°C G E E C G C G E VCE(ON) typ. = 1.65V @ IC = 75A IRGP6690DPbF IRGP6690D-EPbF n-channel TO-247AC TO-247AD Applications G C E • Welding Gate Collector Emitter • H Bridge Converters Fea

4.1. irgp6630d.pdf Size:699K _igbt

IRGP6690D
IRGP6690D

IRGP6630DPbF IRGP6630D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C C  C IC = 30A, TC =100°C E tSC 5µs, TJ(max) = 175°C G E C G C G E VCE(ON) typ. = 1.65V @ IC = 18A IRGP6630DPbF IRGP6630D‐EPbF  n-channel TO‐247AC TO‐247AD  Applications G C E  Welding Gate Collector Emitter  H Bridg

4.2. irgp6650d.pdf Size:688K _igbt

IRGP6690D
IRGP6690D

IRGP6650DPbF IRGP6650D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C C  C IC = 50A, TC =100°C E tSC 5µs, TJ(max) = 175°C G E C G C G E VCE(ON) typ. = 1.65V @ IC = 35A IRGP6650DPbF IRGP6650D‐EPbF  n-channel TO‐247AC TO‐247AD  Applications G C E  Welding Gate Collector Emitter  H Bridg

 4.3. irgp6660d.pdf Size:682K _igbt

IRGP6690D
IRGP6690D

 IRGP6660DPbF IRGP6660D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C C C IC = 60A, TC =100°C tSC ≥ 5µs, TJ(max) = 175°C G E E C G C G E VCE(ON) typ. = 1.7V @ IC = 48A IRGP6660DPbF IRGP6660D-EPbF n-channel TO-247AC TO-247AD Applications G C E • Welding Gate Collector Emitter • H Bridge Converters Feat

4.4. auirgp66524d0.pdf Size:976K _igbt_a

IRGP6690D
IRGP6690D

AUIRGP66524D0 AUIRGF66524D0 AUTOMOTIVE GRADE INSULATED GATE BIPOLAR TRANSISTOR WITH ™  COOLiRIGBT ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V INOMINAL = 24A E Tsc 6µs, TJ(MAX) = 175°C G C E G C G E VCE(ON) typ. = 1.60V TO-247AC TO-247AD n-channel AUIRGP66524D0 AUIRGF66524D0 Applications G C E  Air Conditioning Compressor Gate Collector E

Otros transistores... IRGP4790D , MMG75S060B6N , 40MT120UHAPBF , 40MT120UHTAPBF , MMG75H120H6HN , MMG75HB120H6HN , MMG75HB120H6UN , MMG75S060B6R , IRG7IC28U , MM50G120L , MMG100S060B6N , MMG150HB060H6EN , MMG150S060B6EN , MMG50SR120B , MMG50SR120DE , MMG50SR120FZB , MMG50SR120UA .

Back to Top

 


IRGP6690D
  IRGP6690D
  IRGP6690D
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores

IGBT: RJP30H2A | GT50JR22 | IRGC16B60KB | IRGC16B120KB | IRGC15B120UB | IRGC15B120KB | IRGC100B60UB | IRGC100B60KB | IRGC100B120UB | IRGC100B120KB |


Introduzca al menos 1 números o letras

 

Back to Top