All IGBT. IRGP6690D Datasheet

 

IRGP6690D Datasheet and Replacement


   Type Designator: IRGP6690D
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 483 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 140 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.65 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   tr ⓘ - Rise Time, typ: 86 nS
   Coesⓘ - Output Capacitance, typ: 270 pF
   Qg ⓘ - Total Gate Charge, typ: 140 nC
   Package: TO247
 

 IRGP6690D substitution

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IRGP6690D Datasheet (PDF)

 ..1. Size:649K  international rectifier
 irgp6690d.pdf pdf_icon

IRGP6690D

IRGP6690DPbF IRGP6690D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C C C IC = 90A, TC =100C tSC 5s, TJ(max) = 175C GE E C G C G EVCE(ON) typ. = 1.65V @ IC = 75A IRGP6690DPbF IRGP6690D-EPbF n-channelTO-247AC TO-247AD Applications G C E Welding Gate Collector Emitter H Bridge Converters Fea

 0.1. Size:637K  international rectifier
 irgp6690dpbf irgp6690d-epbf.pdf pdf_icon

IRGP6690D

IRGP6690DPbF IRGP6690D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C C C IC = 90A, TC =100C tSC 5s, TJ(max) = 175C GE E C G C G EVCE(ON) typ. = 1.65V @ IC = 75A IRGP6690DPbF IRGP6690D-EPbF n-channelTO-247AC TO-247AD Applications G C E Welding Gate Collector Emitter H Bridge Converters Fea

 8.1. Size:682K  international rectifier
 irgp6660d.pdf pdf_icon

IRGP6690D

IRGP6660DPbF IRGP6660D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C C C IC = 60A, TC =100C tSC 5s, TJ(max) = 175C GE E C G C G EVCE(ON) typ. = 1.7V @ IC = 48A IRGP6660DPbF IRGP6660D-EPbF n-channelTO-247AC TO-247AD Applications G C E Welding Gate Collector Emitter H Bridge Converters Feat

 8.2. Size:688K  international rectifier
 irgp6650d.pdf pdf_icon

IRGP6690D

IRGP6650DPbF IRGP6650D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C C C IC = 50A, TC =100C E tSC 5s, TJ(max) = 175C GE C G C G EVCE(ON) typ. = 1.65V @ IC = 35A IRGP6650DPbFIRGP6650DEPbFn-channelTO247ACTO247ADApplications G C E Welding Gate Collector Emitter H Bridg

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Datasheet: IRGP4790D , MMG75S060B6N , 40MT120UHAPBF , 40MT120UHTAPBF , MMG75H120H6HN , MMG75HB120H6HN , MMG75HB120H6UN , MMG75S060B6R , GT50JR22 , MM50G120L , MMG100S060B6N , MMG150HB060H6EN , MMG150S060B6EN , MMG50SR120B , MMG50SR120DE , MMG50SR120FZB , MMG50SR120UA .

Keywords - IRGP6690D transistor datasheet

 IRGP6690D cross reference
 IRGP6690D equivalent finder
 IRGP6690D lookup
 IRGP6690D substitution
 IRGP6690D replacement

 

 
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