All IGBT. IRGP6690D Datasheet

 

IRGP6690D IGBT. Datasheet pdf. Equivalent

Type Designator: IRGP6690D

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 483

Maximum Collector-Emitter Voltage |Vce|, V: 600

Collector-Emitter saturation Voltage |Vcesat|, V: 1.65

Maximum Gate-Emitter Voltage |Veg|, V: 20

Maximum Collector Current |Ic|, A: 140

Maximum Junction Temperature (Tj), °C: 175

Rise Time, nS: 86

Maximum Collector Capacity (Cc), pF: 270

Package: TO247

IRGP6690D Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IRGP6690D Datasheet (PDF)

0.1. irgp6690d.pdf Size:649K _international_rectifier

IRGP6690D
IRGP6690D

IRGP6690DPbF IRGP6690D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C C C IC = 90A, TC =100C tSC 5s, TJ(max) = 175C GE E C G C G EVCE(ON) typ. = 1.65V @ IC = 75A IRGP6690DPbF IRGP6690D-EPbF n-channelTO-247AC TO-247AD Applications G C E Welding Gate Collector Emitter H Bridge Converters Fea

8.1. irgp6630d.pdf Size:699K _international_rectifier

IRGP6690D
IRGP6690D

IRGP6630DPbF IRGP6630D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C C C IC = 30A, TC =100C E tSC 5s, TJ(max) = 175C GE C G C G EVCE(ON) typ. = 1.65V @ IC = 18A IRGP6630DPbFIRGP6630DEPbFn-channelTO247ACTO247ADApplications G C E Welding Gate Collector Emitter H Bridg

8.2. irgp6650d.pdf Size:688K _international_rectifier

IRGP6690D
IRGP6690D

IRGP6650DPbF IRGP6650D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C C C IC = 50A, TC =100C E tSC 5s, TJ(max) = 175C GE C G C G EVCE(ON) typ. = 1.65V @ IC = 35A IRGP6650DPbFIRGP6650DEPbFn-channelTO247ACTO247ADApplications G C E Welding Gate Collector Emitter H Bridg

 8.3. auirgp66524d0.pdf Size:976K _international_rectifier

IRGP6690D
IRGP6690D

AUIRGP66524D0 AUIRGF66524D0 AUTOMOTIVE GRADE INSULATED GATE BIPOLAR TRANSISTOR WITH COOLiRIGBT ULTRAFAST SOFT RECOVERY DIODE CVCES = 600V INOMINAL = 24A E Tsc 6s, TJ(MAX) = 175C GC E G C G EVCE(ON) typ. = 1.60V TO-247AC TO-247AD n-channelAUIRGP66524D0 AUIRGF66524D0 Applications G C E Air Conditioning Compressor Gate Collector E

8.4. irgp6660d.pdf Size:682K _international_rectifier

IRGP6690D
IRGP6690D

IRGP6660DPbF IRGP6660D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C C C IC = 60A, TC =100C tSC 5s, TJ(max) = 175C GE E C G C G EVCE(ON) typ. = 1.7V @ IC = 48A IRGP6660DPbF IRGP6660D-EPbF n-channelTO-247AC TO-247AD Applications G C E Welding Gate Collector Emitter H Bridge Converters Feat

Datasheet: IRGP4790D , MMG75S060B6N , 40MT120UHAPBF , 40MT120UHTAPBF , MMG75H120H6HN , MMG75HB120H6HN , MMG75HB120H6UN , MMG75S060B6R , IRG7IC28U , MM50G120L , MMG100S060B6N , MMG150HB060H6EN , MMG150S060B6EN , MMG50SR120B , MMG50SR120DE , MMG50SR120FZB , MMG50SR120UA .

 

 
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