HGTG20N60C3DR
- IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HGTG20N60C3DR
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 164
W
|Vce|ⓘ - Tensión máxima colector-emisor: 600
V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20
V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 40
A
|VCEsat|ⓘ -
Voltaje de saturación colector-emisor, typ: 1.8
V @25℃
Tjⓘ -
Temperatura máxima de unión: 150
℃
trⓘ - Tiempo de subida, typ: 40
nS
Paquete / Cubierta:
TO247
- Selección de transistores por parámetros
HGTG20N60C3DR
Datasheet (PDF)
3.3. Size:112K 1
hgtp20n60c3r hgtg20n60c3r hgt1s20n60c3r hgt1s20n60c3rs.pdf 
HGTG20N60C3R, HGTP20N60C3R,S E M I C O N D U C T O RHGT1S20N60C3R, HGT1S20N60C3RS40A, 600V, Rugged UFS Series N-Channel IGBTsJanuary 1997Features Description 40A, 600V TJ = 25oC This family of IGBTs was designed for optimum performancein the demanding world of motor control operation as well as 600V Switching SOA Capabilityother high voltage switching applications. These
3.4. Size:140K fairchild semi
hgt1s20n60c3s hgtp20n60c3 hgtg20n60c3.pdf
HGTG20N60C3, HGTP20N60C3,HGT1S20N60C3SData Sheet December 200145A, 600V, UFS Series N-Channel IGBT FeaturesThis family of MOS gated high voltage switching devices 45A, 600V, TC = 25oCcombining the best features of MOSFETs and bipolar 600V Switching SOA Capabilitytransistors. These devices have the high input impedance of Typical Fall Time. . . . . . . . . . . . . .
3.5. Size:260K onsemi
hgtg20n60c3 hgtp20n60c3 hgt1s20n60c3s.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
3.6. Size:112K harris semi
hgtg20n60c3r.pdf
HGTG20N60C3R, HGTP20N60C3R,S E M I C O N D U C T O RHGT1S20N60C3R, HGT1S20N60C3RS40A, 600V, Rugged UFS Series N-Channel IGBTsJanuary 1997Features Description 40A, 600V TJ = 25oC This family of IGBTs was designed for optimum performancein the demanding world of motor control operation as well as 600V Switching SOA Capabilityother high voltage switching applications. These
Otros transistores... HGTG20N120CND
, HGTG20N120E2
, HGTG20N60A4
, HGTG20N60A4D
, HGTG20N60B3
, HGTG20N60B3D
, HGTG20N60C3
, HGTG20N60C3D
, IRGB20B60PD1
, HGTG20N60C3R
, HGTG27N120BN
, HGTG27N60C3DR
, HGTG27N60C3R
, HGTG30N120CN
, HGTG30N60A4
, HGTG30N60A4D
, HGTG30N60B3
.
History: SRE80N065FSUD8
