HGTG20N60C3DR Datasheet. Specs and Replacement

Type Designator: HGTG20N60C3DR  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 164 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 40 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃

tr ⓘ - Rise Time, typ: 40 nS

Package: TO247

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Specs: HGTG20N120CND, HGTG20N120E2, HGTG20N60A4, HGTG20N60A4D, HGTG20N60B3, HGTG20N60B3D, HGTG20N60C3, HGTG20N60C3D, MBQ40T65FDSC, HGTG20N60C3R, HGTG27N120BN, HGTG27N60C3DR, HGTG27N60C3R, HGTG30N120CN, HGTG30N60A4, HGTG30N60A4D, HGTG30N60B3

Keywords - HGTG20N60C3DR transistor spec

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