HGTG20N60C3DR Datasheet and Replacement
Type Designator: HGTG20N60C3DR
Type: IGBT
Type of IGBT Channel: N
Pcⓘ -
Maximum Power Dissipation: 164
W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600
V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20
V
|Ic|ⓘ - Maximum Collector Current: 40
A @25℃
|VCEsat|ⓘ -
Collector-Emitter saturation Voltage, typ: 1.8
V @25℃
Tjⓘ -
Maximum Junction Temperature: 150
℃
trⓘ - Rise Time, typ: 40
nS
Package:
TO247
- IGBT Cross-Reference
HGTG20N60C3DR Datasheet (PDF)
3.3. Size:112K 1
hgtp20n60c3r hgtg20n60c3r hgt1s20n60c3r hgt1s20n60c3rs.pdf 

HGTG20N60C3R, HGTP20N60C3R,S E M I C O N D U C T O RHGT1S20N60C3R, HGT1S20N60C3RS40A, 600V, Rugged UFS Series N-Channel IGBTsJanuary 1997Features Description 40A, 600V TJ = 25oC This family of IGBTs was designed for optimum performancein the demanding world of motor control operation as well as 600V Switching SOA Capabilityother high voltage switching applications. These
3.4. Size:140K fairchild semi
hgt1s20n60c3s hgtp20n60c3 hgtg20n60c3.pdf 

HGTG20N60C3, HGTP20N60C3,HGT1S20N60C3SData Sheet December 200145A, 600V, UFS Series N-Channel IGBT FeaturesThis family of MOS gated high voltage switching devices 45A, 600V, TC = 25oCcombining the best features of MOSFETs and bipolar 600V Switching SOA Capabilitytransistors. These devices have the high input impedance of Typical Fall Time. . . . . . . . . . . . . .
3.5. Size:260K onsemi
hgtg20n60c3 hgtp20n60c3 hgt1s20n60c3s.pdf 

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
3.6. Size:112K harris semi
hgtg20n60c3r.pdf 

HGTG20N60C3R, HGTP20N60C3R,S E M I C O N D U C T O RHGT1S20N60C3R, HGT1S20N60C3RS40A, 600V, Rugged UFS Series N-Channel IGBTsJanuary 1997Features Description 40A, 600V TJ = 25oC This family of IGBTs was designed for optimum performancein the demanding world of motor control operation as well as 600V Switching SOA Capabilityother high voltage switching applications. These
Datasheet: HGTG20N120CND
, HGTG20N120E2
, HGTG20N60A4
, HGTG20N60A4D
, HGTG20N60B3
, HGTG20N60B3D
, HGTG20N60C3
, HGTG20N60C3D
, IRGB20B60PD1
, HGTG20N60C3R
, HGTG27N120BN
, HGTG27N60C3DR
, HGTG27N60C3R
, HGTG30N120CN
, HGTG30N60A4
, HGTG30N60A4D
, HGTG30N60B3
.
Keywords - HGTG20N60C3DR transistor datasheet
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HGTG20N60C3DR replacement