All IGBT. HGTG20N60C3DR Datasheet

 

HGTG20N60C3DR Datasheet and Replacement


   Type Designator: HGTG20N60C3DR
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 164 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 40 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 40 nS
   Package: TO247
      - IGBT Cross-Reference

 

HGTG20N60C3DR Datasheet (PDF)

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HGTG20N60C3DR

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HGTG20N60C3DR

Datasheet: HGTG20N120CND , HGTG20N120E2 , HGTG20N60A4 , HGTG20N60A4D , HGTG20N60B3 , HGTG20N60B3D , HGTG20N60C3 , HGTG20N60C3D , IRGB20B60PD1 , HGTG20N60C3R , HGTG27N120BN , HGTG27N60C3DR , HGTG27N60C3R , HGTG30N120CN , HGTG30N60A4 , HGTG30N60A4D , HGTG30N60B3 .

Keywords - HGTG20N60C3DR transistor datasheet

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