HGTG20N60C3DR Specs and Replacement
Type Designator: HGTG20N60C3DR
Type: IGBT
Type of IGBT Channel: N
Pc ⓘ -
Maximum Power Dissipation: 164
W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600
V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20
V
|Ic| ⓘ - Maximum Collector Current: 40
A @25℃
|VCEsat|ⓘ -
Collector-Emitter saturation Voltage, typ: 1.8
V @25℃
Tj ⓘ -
Maximum Junction Temperature: 150
℃
tr ⓘ - Rise Time, typ: 40
nS
Package:
TO247
HGTG20N60C3DR Substitution
-
IGBT ⓘ Cross-Reference Search
HGTG20N60C3DR specs
3.3. Size:112K 1
hgtp20n60c3r hgtg20n60c3r hgt1s20n60c3r hgt1s20n60c3rs.pdf 
HGTG20N60C3R, HGTP20N60C3R, S E M I C O N D U C T O R HGT1S20N60C3R, HGT1S20N60C3RS 40A, 600V, Rugged UFS Series N-Channel IGBTs January 1997 Features Description 40A, 600V TJ = 25oC This family of IGBTs was designed for optimum performance in the demanding world of motor control operation as well as 600V Switching SOA Capability other high voltage switching applications. These... See More ⇒
3.4. Size:140K fairchild semi
hgt1s20n60c3s hgtp20n60c3 hgtg20n60c3.pdf
HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S Data Sheet December 2001 45A, 600V, UFS Series N-Channel IGBT Features This family of MOS gated high voltage switching devices 45A, 600V, TC = 25oC combining the best features of MOSFETs and bipolar 600V Switching SOA Capability transistors. These devices have the high input impedance of Typical Fall Time. . . . . . . . . . . . . .... See More ⇒
3.5. Size:260K onsemi
hgtg20n60c3 hgtp20n60c3 hgt1s20n60c3s.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒
3.6. Size:112K harris semi
hgtg20n60c3r.pdf
HGTG20N60C3R, HGTP20N60C3R, S E M I C O N D U C T O R HGT1S20N60C3R, HGT1S20N60C3RS 40A, 600V, Rugged UFS Series N-Channel IGBTs January 1997 Features Description 40A, 600V TJ = 25oC This family of IGBTs was designed for optimum performance in the demanding world of motor control operation as well as 600V Switching SOA Capability other high voltage switching applications. These... See More ⇒
Specs: HGTG20N120CND
, HGTG20N120E2
, HGTG20N60A4
, HGTG20N60A4D
, HGTG20N60B3
, HGTG20N60B3D
, HGTG20N60C3
, HGTG20N60C3D
, GT30G122
, HGTG20N60C3R
, HGTG27N120BN
, HGTG27N60C3DR
, HGTG27N60C3R
, HGTG30N120CN
, HGTG30N60A4
, HGTG30N60A4D
, HGTG30N60B3
.
Keywords - HGTG20N60C3DR transistor spec
HGTG20N60C3DR cross reference
HGTG20N60C3DR equivalent finder
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