MMG225WB120B6TN - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MMG225WB120B6TN
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 1050 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 225 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.7 V @25℃
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 45 nS
Paquete / Cubierta: MODULE
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MMG225WB120B6TN Datasheet (PDF)
mmg225wb120b6tn.pdf
MMG225WB120B6TN1200V 225A IGBT ModuleMay 2015 Version 01 RoHS CompliantPRODUCT FEATURES IGBT3 CHIP(Trench+Field Stop technology) Low saturation voltage and positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Temperature sense includedAPPLICATIONS AC motor control Motion/servo c
mmg225wb170b6en.pdf
MMG225WB170B6EN1700V 225A IGBT ModuleMay 2015 Version 01 RoHS CompliantPRODUCT FEATURES IGBT3 CHIP(1700V Trench+Field Stop technology) Low turn-off losses, short tail current VCE(sat) with positive temperature coefficient DIODE CHIP(1700V EMCON 3 technology) Free wheeling diodes with fast and soft reverse recovery Temperature sense includedAPPLICATIONS
Otros transistores... MMG150D170B6EN , MMG150SR120B , MMG100D120B6HN , MMG300D060B6EN , MMG150D120B6HN , MMG200D120B6TN , MMG200Q120B , MMG200Q120B6TN , RJH60F5DPQ-A0 , MMG200Q120B6HN , MMG400HB060B6EN , MMG400Q060B6EN , MMG150DR120B , MMG150DR120DE , MMG150DR120UA , MMG150DR120UK , MMG150DR120UZA .
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