All IGBT. MMG225WB120B6TN Datasheet

 

MMG225WB120B6TN Datasheet and Replacement


   Type Designator: MMG225WB120B6TN
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 1050 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 225 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 45 nS
   Package: MODULE
      - IGBT Cross-Reference

 

MMG225WB120B6TN Datasheet (PDF)

 0.1. Size:403K  macmic
mmg225wb120b6tn.pdf pdf_icon

MMG225WB120B6TN

MMG225WB120B6TN1200V 225A IGBT ModuleMay 2015 Version 01 RoHS CompliantPRODUCT FEATURES IGBT3 CHIP(Trench+Field Stop technology) Low saturation voltage and positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Temperature sense includedAPPLICATIONS AC motor control Motion/servo c

 5.1. Size:286K  macmic
mmg225wb170b6en.pdf pdf_icon

MMG225WB120B6TN

MMG225WB170B6EN1700V 225A IGBT ModuleMay 2015 Version 01 RoHS CompliantPRODUCT FEATURES IGBT3 CHIP(1700V Trench+Field Stop technology) Low turn-off losses, short tail current VCE(sat) with positive temperature coefficient DIODE CHIP(1700V EMCON 3 technology) Free wheeling diodes with fast and soft reverse recovery Temperature sense includedAPPLICATIONS

Datasheet: MMG150D170B6EN , MMG150SR120B , MMG100D120B6HN , MMG300D060B6EN , MMG150D120B6HN , MMG200D120B6TN , MMG200Q120B , MMG200Q120B6TN , IKW50N60H3 , MMG200Q120B6HN , MMG400HB060B6EN , MMG400Q060B6EN , MMG150DR120B , MMG150DR120DE , MMG150DR120UA , MMG150DR120UK , MMG150DR120UZA .

History: IXGH16N60B2D1 | IXGR50N60C2D1 | RJP60V0DPM | MG300N1US1 | GT10G101 | VS-GT140DA60U | IXGH35N120B

Keywords - MMG225WB120B6TN transistor datasheet

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