MMG225WB170B6EN Todos los transistores

 

MMG225WB170B6EN IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MMG225WB170B6EN

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 1400 W

|Vce|ⓘ - Tensión máxima colector-emisor: 1700 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 225 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2 V @25℃

trⓘ - Tiempo de subida, typ: 60 nS

Encapsulados: MODULE

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MMG225WB170B6EN datasheet

 0.1. Size:286K  macmic
 mmg225wb170b6en.pdf pdf_icon

MMG225WB170B6EN

MMG225WB170B6EN 1700V 225A IGBT Module May 2015 Version 01 RoHS Compliant PRODUCT FEATURES IGBT3 CHIP(1700V Trench+Field Stop technology) Low turn-off losses, short tail current VCE(sat) with positive temperature coefficient DIODE CHIP(1700V EMCON 3 technology) Free wheeling diodes with fast and soft reverse recovery Temperature sense included APPLICATIONS

 5.1. Size:403K  macmic
 mmg225wb120b6tn.pdf pdf_icon

MMG225WB170B6EN

MMG225WB120B6TN 1200V 225A IGBT Module May 2015 Version 01 RoHS Compliant PRODUCT FEATURES IGBT3 CHIP(Trench+Field Stop technology) Low saturation voltage and positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Temperature sense included APPLICATIONS AC motor control Motion/servo c

Otros transistores... MMG75SR120UZA , MMG75SR120UZK , MMG200DR120B , MMG200DR120DE , MMG200DR120UA , MMG200DR120UK , MMG200DR120UZA , MMG200DR120UZK , CRG40T60AN3H , MMG300WB120B6TN , MMG400D060B6N , MMG400D060UK6N , MMG300D120B6TN , MMG300D120B6UN , MMG600WB060B6EN , MMG300D120B6HN , MMG300WB170B6EN .

History: MMG150HB060B6EN | MMG200DR120UA

 

 

 


 
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