MMG225WB170B6EN Specs and Replacement
Type Designator: MMG225WB170B6EN
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 1400 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1700 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 225 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃
Package: MODULE MMG225WB170B6EN Substitution - IGBT ⓘ Cross-Reference Search
MMG225WB170B6EN datasheet
mmg225wb170b6en.pdf
MMG225WB170B6EN 1700V 225A IGBT Module May 2015 Version 01 RoHS Compliant PRODUCT FEATURES IGBT3 CHIP(1700V Trench+Field Stop technology) Low turn-off losses, short tail current VCE(sat) with positive temperature coefficient DIODE CHIP(1700V EMCON 3 technology) Free wheeling diodes with fast and soft reverse recovery Temperature sense included APPLICATIONS ... See More ⇒
mmg225wb120b6tn.pdf
MMG225WB120B6TN 1200V 225A IGBT Module May 2015 Version 01 RoHS Compliant PRODUCT FEATURES IGBT3 CHIP(Trench+Field Stop technology) Low saturation voltage and positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Temperature sense included APPLICATIONS AC motor control Motion/servo c... See More ⇒
Specs: MMG75SR120UZA , MMG75SR120UZK , MMG200DR120B , MMG200DR120DE , MMG200DR120UA , MMG200DR120UK , MMG200DR120UZA , MMG200DR120UZK , CRG40T60AN3H , MMG300WB120B6TN , MMG400D060B6N , MMG400D060UK6N , MMG300D120B6TN , MMG300D120B6UN , MMG600WB060B6EN , MMG300D120B6HN , MMG300WB170B6EN .
History: MMG200DR120UA
Keywords - MMG225WB170B6EN transistor spec
MMG225WB170B6EN cross reference
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History: MMG200DR120UA
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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