SKM200GAL123DKLD110 Todos los transistores

 

SKM200GAL123DKLD110 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SKM200GAL123DKLD110
   Tipo de transistor: IGBT + Diode
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 1040 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 300 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.8 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 7 V
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 65 nS
   Paquete / Cubierta: MODULE
     - Selección de transistores por parámetros

 

SKM200GAL123DKLD110 Datasheet (PDF)

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SKM200GAL123DKLD110

SKM200GAL123DKLD110 1200V 200A RECTIFIER AND CHOPPER Module August 2011 PRELIMINARY RoHS Compliant FEATURES Ultra Low Loss High Ruggedness High Short Circuit Capability VCE(sat) With Positive Temperature Coefficient With Fast Free-Wheeling Diodes APPLICATIONS AC and DC motor control AC servo and robot drives Power supplies Welding in

 1.1. Size:635K  semikron
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SKM200GAL123DKLD110

 3.1. Size:415K  semikron
 skm200gal12t4.pdf pdf_icon

SKM200GAL123DKLD110

SKM200GAL12T4Absolute Maximum Ratings Symbol Conditions Values UnitIGBTVCES 1200 VIC Tc =25C 314 ATj = 175 CTc =80C 242 AICnom 200 AICRM ICRM = 3xICnom 600 AVGES -20 ... 20 VVCC = 800 VSEMITRANS3tpsc VGE 15 V Tj = 150 C 10 sVCES 1200 VTj -40 ... 175 CFast IGBT4 ModulesInverse diodeIF Tc =25C 229 ATj = 175 CSKM200GAL12T4Tc =80

 3.2. Size:664K  semikron
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SKM200GAL123DKLD110

MOSTRAR MÁS

Otros transistores... AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , IHW20N135R5 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .

History: FF300R07KE4

 

 
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