SKM200GAL123DKLD110 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SKM200GAL123DKLD110

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 1040 W

|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 300 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.8 V @25℃

trⓘ - Tiempo de subida, typ: 65 nS

Encapsulados: MODULE

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SKM200GAL123DKLD110 datasheet

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 skm200gal123dkld110.pdf pdf_icon

SKM200GAL123DKLD110

SKM200GAL123DKLD110 1200V 200A RECTIFIER AND CHOPPER Module August 2011 PRELIMINARY RoHS Compliant FEATURES Ultra Low Loss High Ruggedness High Short Circuit Capability VCE(sat) With Positive Temperature Coefficient With Fast Free-Wheeling Diodes APPLICATIONS AC and DC motor control AC servo and robot drives Power supplies Welding in

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 skm200gal123d.pdf pdf_icon

SKM200GAL123DKLD110

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 skm200gal12t4.pdf pdf_icon

SKM200GAL123DKLD110

SKM200GAL12T4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES 1200 V IC Tc =25 C 314 A Tj = 175 C Tc =80 C 242 A ICnom 200 A ICRM ICRM = 3xICnom 600 A VGES -20 ... 20 V VCC = 800 V SEMITRANS 3 tpsc VGE 15 V Tj = 150 C 10 s VCES 1200 V Tj -40 ... 175 C Fast IGBT4 Modules Inverse diode IF Tc =25 C 229 A Tj = 175 C SKM200GAL12T4 Tc =80

 3.2. Size:664K  semikron
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SKM200GAL123DKLD110

MOSTRAR MÁS

Otros transistores... MMG300D120B6HN, MMG300WB170B6EN, MMG400K120U6TN, MMG400K120U6UN, MMG150D120B6UN, MMG300D060B6N, MMG300D170B6EN, MMG400D060B6EN, G50T65D, MMG200D120B6UN, MMG100Q120B6TN, MMG150Q060B6HN, MMG150Q120B, MMG150Q120B6HN, MMG400D120B6TN, MMG400D120UA6TN, MMG400KR120U