SKM200GAL123DKLD110 Datasheet and Replacement
Type Designator: SKM200GAL123DKLD110
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 1040 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 300 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 65 nS
Package: MODULE
- IGBT Cross-Reference
SKM200GAL123DKLD110 Datasheet (PDF)
skm200gal123dkld110.pdf

SKM200GAL123DKLD110 1200V 200A RECTIFIER AND CHOPPER Module August 2011 PRELIMINARY RoHS Compliant FEATURES Ultra Low Loss High Ruggedness High Short Circuit Capability VCE(sat) With Positive Temperature Coefficient With Fast Free-Wheeling Diodes APPLICATIONS AC and DC motor control AC servo and robot drives Power supplies Welding in
skm200gal12t4.pdf

SKM200GAL12T4Absolute Maximum Ratings Symbol Conditions Values UnitIGBTVCES 1200 VIC Tc =25C 314 ATj = 175 CTc =80C 242 AICnom 200 AICRM ICRM = 3xICnom 600 AVGES -20 ... 20 VVCC = 800 VSEMITRANS3tpsc VGE 15 V Tj = 150 C 10 sVCES 1200 VTj -40 ... 175 CFast IGBT4 ModulesInverse diodeIF Tc =25C 229 ATj = 175 CSKM200GAL12T4Tc =80
Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , IHW20N135R5 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .
History: 1MBI600LN-060 | NGTB20N120IHWG | APT35GN120BG | NGTB20N120IH | IXSM45N100 | HGTD3N60C3 | KGT25N120KDA
Keywords - SKM200GAL123DKLD110 transistor datasheet
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SKM200GAL123DKLD110 lookup
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History: 1MBI600LN-060 | NGTB20N120IHWG | APT35GN120BG | NGTB20N120IH | IXSM45N100 | HGTD3N60C3 | KGT25N120KDA



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IGBT: G50T65LBBW | G50T65DS | G40N120D | G25T120D | DHG60T65D | DGF30F65M2 | DGE20F65M2 | DGD06F65M2 | DGC75F65M | DGC75F120M2 | DGC60F65M
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