IGW30N65L5 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IGW30N65L5
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 227 W
|Vce|ⓘ - Tensión máxima colector-emisor: 650 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 85 A
Tjⓘ - Temperatura máxima de unión: 175 ℃
CARACTERÍSTICAS ELÉCTRICAS
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.05 V @25℃
trⓘ - Tiempo de subida, typ: 11 nS
Coesⓘ - Capacitancia de salida, typ: 42 pF
Encapsulados: TO247
Búsqueda de reemplazo de IGW30N65L5 IGBT
- Selección ⓘ de transistores por parámetros
IGW30N65L5 datasheet
igw30n65l5.pdf
IGBT Low V IGBT in TRENCHSTOPTM 5 technology CE(sat) IGW30N65L5 650V IGBT Low V series fifth generation CE(sat) Data sheet Industrial Power Control IGW30N65L5 Low V series fifth generation CE(sat) Low V IGBT in TRENCHSTOPTM 5 technology CE(sat) Features and Benefits C Low V L5 technology offering CE(sat) Very low collector-emitter saturation voltage V CEsat Best-in-C
igw30n60h3 rev1 1g.pdf
IGBT High speed IGBT in Trench and Fieldstop technology IGW30N60H3 600V high speed switching series third generation Datasheet Industrial & Multimarket IGW30N60H3 High speed switching series third generation High speed IGBT in Trench and Fieldstop technology Features C TRENCHSTOPTM technology offering very low V CEsat low EMI Very soft, fast recovery anti-parallel d
igw30n60tp.pdf
IGBT TRENCHSTOPTM Performance technology IGW30N60TP 600V IGBT TRENCHSTOPTM Performance series Data sheet Industrial Power Control IGW30N60TP TRENCHSTOPTM Performance Series High speed IGBT in Trench and Fieldstop technology Features C TRENCHSTOPTM technology offering very low V CEsat low turn-off losses short tail current low EMI G maximum junction temperat
igw30n60h3.pdf
IGBT High speed IGBT in Trench and Fieldstop technology IGW30N60H3 600V high speed switching series third generation Data sheet Industrial Power Control IGW30N60H3 High speed switching series third generation High speed IGBT in Trench and Fieldstop technology Features C TRENCHSTOPTM technology offering very low V CEsat low EMI Very soft, fast recovery anti-parallel d
Otros transistores... KM435B , T0360NB25A , MMG300DR120B , KM435V , NSGM300GB120B , MMG400D120B6HN , MMG450WB170B6EN , MMG400D170B6EN , AOK40B65H2AL , IKD06N60-RF , IKD10N60RF , IKD15N60RF , IQAB50N60D1 , IQAB75N60A1 , IQAB75N60D1 , IQG1B150N120B4 , IQG1B228N120B4 .
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
Popular searches
2n3055 | irfp260n | 2n2222 datasheet | irf9540 | 2n3055 datasheet | 2sc945 | irfp250n | irf9540n





