IGW30N65L5 Todos los transistores

 

IGW30N65L5 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IGW30N65L5
   Tipo de transistor: IGBT
   Código de marcado: G30EL5
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 227 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 650 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 85 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.05 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 5.8 V
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   trⓘ - Tiempo de subida, typ: 11 nS
   Coesⓘ - Capacitancia de salida, typ: 42 pF
   Qgⓘ - Carga total de la puerta, typ: 168 nC
   Paquete / Cubierta: TO247
     - Selección de transistores por parámetros

 

IGW30N65L5 Datasheet (PDF)

 ..1. Size:1778K  infineon
igw30n65l5.pdf pdf_icon

IGW30N65L5

IGBTLow V IGBT in TRENCHSTOPTM 5 technologyCE(sat)IGW30N65L5650V IGBT Low V series fifth generationCE(sat)Data sheetIndustrial Power ControlIGW30N65L5Low V series fifth generationCE(sat)Low V IGBT in TRENCHSTOPTM 5 technologyCE(sat)Features and Benefits: CLow V L5 technology offeringCE(sat) Very low collector-emitter saturation voltage VCEsat Best-in-C

 7.1. Size:1561K  infineon
igw30n60h3 rev1 1g.pdf pdf_icon

IGW30N65L5

IGBTHigh speed IGBT in Trench and Fieldstop technologyIGW30N60H3600V high speed switching series third generationDatasheetIndustrial & MultimarketIGW30N60H3High speed switching series third generationHigh speed IGBT in Trench and Fieldstop technologyFeatures: CTRENCHSTOPTM technology offering very low VCEsat low EMI Very soft, fast recovery anti-parallel d

 7.2. Size:1458K  infineon
igw30n60tp.pdf pdf_icon

IGW30N65L5

IGBTTRENCHSTOPTM Performance technologyIGW30N60TP600V IGBT TRENCHSTOPTM Performance seriesData sheetIndustrial Power ControlIGW30N60TPTRENCHSTOPTM Performance SeriesHigh speed IGBT in Trench and Fieldstop technologyFeatures: CTRENCHSTOPTM technology offering very low VCEsat low turn-off losses short tail current low EMI G maximum junction temperat

 7.3. Size:1997K  infineon
igw30n60h3.pdf pdf_icon

IGW30N65L5

IGBTHigh speed IGBT in Trench and Fieldstop technologyIGW30N60H3600V high speed switching series third generationData sheetIndustrial Power ControlIGW30N60H3High speed switching series third generationHigh speed IGBT in Trench and Fieldstop technologyFeatures: CTRENCHSTOPTM technology offering very low VCEsat low EMI Very soft, fast recovery anti-parallel d

Otros transistores... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: IGC05R60DE | IGC36T120T8L | IGC10T65QE | IGC10R60D | DIM1200ASM45-TS001 | DF80R12W2H3_B11 | T1600GB45G

 

 
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