IGW30N65L5 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IGW30N65L5
Tipo de transistor: IGBT
Código de marcado: G30EL5
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 227 W
|Vce|ⓘ - Tensión máxima colector-emisor: 650 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 85 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.05 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 5.8 V
Tjⓘ - Temperatura máxima de unión: 175 ℃
trⓘ - Tiempo de subida, typ: 11 nS
Coesⓘ - Capacitancia de salida, typ: 42 pF
Qgⓘ - Carga total de la puerta, typ: 168 nC
Paquete / Cubierta: TO247
- Selección de transistores por parámetros
IGW30N65L5 Datasheet (PDF)
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Otros transistores... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
History: IGC05R60DE | IGC36T120T8L | IGC10T65QE | IGC10R60D | DIM1200ASM45-TS001 | DF80R12W2H3_B11 | T1600GB45G
History: IGC05R60DE | IGC36T120T8L | IGC10T65QE | IGC10R60D | DIM1200ASM45-TS001 | DF80R12W2H3_B11 | T1600GB45G



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