IGW30N65L5 Specs and Replacement
Type Designator: IGW30N65L5
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 227 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 85 A @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.05 V @25℃
tr ⓘ - Rise Time, typ: 11 nS
Coesⓘ - Output Capacitance, typ: 42 pF
Package: TO247
IGW30N65L5 Substitution - IGBT ⓘ Cross-Reference Search
IGW30N65L5 datasheet
igw30n65l5.pdf
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igw30n60tp.pdf
IGBT TRENCHSTOPTM Performance technology IGW30N60TP 600V IGBT TRENCHSTOPTM Performance series Data sheet Industrial Power Control IGW30N60TP TRENCHSTOPTM Performance Series High speed IGBT in Trench and Fieldstop technology Features C TRENCHSTOPTM technology offering very low V CEsat low turn-off losses short tail current low EMI G maximum junction temperat... See More ⇒
igw30n60h3.pdf
IGBT High speed IGBT in Trench and Fieldstop technology IGW30N60H3 600V high speed switching series third generation Data sheet Industrial Power Control IGW30N60H3 High speed switching series third generation High speed IGBT in Trench and Fieldstop technology Features C TRENCHSTOPTM technology offering very low V CEsat low EMI Very soft, fast recovery anti-parallel d... See More ⇒
Specs: KM435B , T0360NB25A , MMG300DR120B , KM435V , NSGM300GB120B , MMG400D120B6HN , MMG450WB170B6EN , MMG400D170B6EN , AOK40B65H2AL , IKD06N60-RF , IKD10N60RF , IKD15N60RF , IQAB50N60D1 , IQAB75N60A1 , IQAB75N60D1 , IQG1B150N120B4 , IQG1B228N120B4 .
History: IGC31T65QE
Keywords - IGW30N65L5 transistor spec
IGW30N65L5 cross reference
IGW30N65L5 equivalent finder
IGW30N65L5 lookup
IGW30N65L5 substitution
IGW30N65L5 replacement
History: IGC31T65QE
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