IGW30N65L5 - аналоги и описание IGBT

 

IGW30N65L5 - аналоги, основные параметры, даташиты

Наименование: IGW30N65L5

Тип транзистора: IGBT

Тип управляющего канала: N

Предельные значения

Pc ⓘ - Максимальная рассеиваемая мощность: 227 W

|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 650 V

|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V

|Ic| ⓘ - Максимальный постоянный ток коллектора: 85 A @25℃

Tj ⓘ - Максимальная температура перехода: 175 ℃

Электрические характеристики

|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.05 V @25℃

tr ⓘ - Время нарастания типовое: 11 nS

Coesⓘ - Выходная емкость, типовая: 42 pF

Тип корпуса: TO247

 Аналог (замена) для IGW30N65L5

- подбор ⓘ IGBT транзистора по параметрам

 

IGW30N65L5 даташит

 ..1. Size:1778K  infineon
igw30n65l5.pdfpdf_icon

IGW30N65L5

IGBT Low V IGBT in TRENCHSTOPTM 5 technology CE(sat) IGW30N65L5 650V IGBT Low V series fifth generation CE(sat) Data sheet Industrial Power Control IGW30N65L5 Low V series fifth generation CE(sat) Low V IGBT in TRENCHSTOPTM 5 technology CE(sat) Features and Benefits C Low V L5 technology offering CE(sat) Very low collector-emitter saturation voltage V CEsat Best-in-C

 7.1. Size:1561K  infineon
igw30n60h3 rev1 1g.pdfpdf_icon

IGW30N65L5

IGBT High speed IGBT in Trench and Fieldstop technology IGW30N60H3 600V high speed switching series third generation Datasheet Industrial & Multimarket IGW30N60H3 High speed switching series third generation High speed IGBT in Trench and Fieldstop technology Features C TRENCHSTOPTM technology offering very low V CEsat low EMI Very soft, fast recovery anti-parallel d

 7.2. Size:1458K  infineon
igw30n60tp.pdfpdf_icon

IGW30N65L5

IGBT TRENCHSTOPTM Performance technology IGW30N60TP 600V IGBT TRENCHSTOPTM Performance series Data sheet Industrial Power Control IGW30N60TP TRENCHSTOPTM Performance Series High speed IGBT in Trench and Fieldstop technology Features C TRENCHSTOPTM technology offering very low V CEsat low turn-off losses short tail current low EMI G maximum junction temperat

 7.3. Size:1997K  infineon
igw30n60h3.pdfpdf_icon

IGW30N65L5

IGBT High speed IGBT in Trench and Fieldstop technology IGW30N60H3 600V high speed switching series third generation Data sheet Industrial Power Control IGW30N60H3 High speed switching series third generation High speed IGBT in Trench and Fieldstop technology Features C TRENCHSTOPTM technology offering very low V CEsat low EMI Very soft, fast recovery anti-parallel d

Другие IGBT... KM435B , T0360NB25A , MMG300DR120B , KM435V , NSGM300GB120B , MMG400D120B6HN , MMG450WB170B6EN , MMG400D170B6EN , AOK40B65H2AL , IKD06N60-RF , IKD10N60RF , IKD15N60RF , IQAB50N60D1 , IQAB75N60A1 , IQAB75N60D1 , IQG1B150N120B4 , IQG1B228N120B4 .

 

 

 


 
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