IGW30N65L5 Даташит. Аналоги. Параметры и характеристики.
Наименование: IGW30N65L5
Тип транзистора: IGBT
Маркировка: G30EL5
Тип управляющего канала: N
Pcⓘ - Максимальная рассеиваемая мощность: 227 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 650 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
|Ic|ⓘ - Максимальный постоянный ток коллектора: 85 A @25℃
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.05 V @25℃
|VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 5.8 V
Tjⓘ - Максимальная температура перехода: 175 ℃
trⓘ - Время нарастания типовое: 11 nS
Coesⓘ - Выходная емкость, типовая: 42 pF
Qgⓘ - Общий заряд затвора, typ: 168 nC
Тип корпуса: TO247
- подбор IGBT транзистора по параметрам
IGW30N65L5 Datasheet (PDF)
igw30n65l5.pdf

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igw30n60h3 rev1 1g.pdf

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igw30n60tp.pdf

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igw30n60h3.pdf

IGBTHigh speed IGBT in Trench and Fieldstop technologyIGW30N60H3600V high speed switching series third generationData sheetIndustrial Power ControlIGW30N60H3High speed switching series third generationHigh speed IGBT in Trench and Fieldstop technologyFeatures: CTRENCHSTOPTM technology offering very low VCEsat low EMI Very soft, fast recovery anti-parallel d
Другие IGBT... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
History: T1600GB45G | IGC36T120T8L | IGC10T65QE | DF80R12W2H3_B11 | DIM1200ASM45-TS001 | IGC10R60D
History: T1600GB45G | IGC36T120T8L | IGC10T65QE | DF80R12W2H3_B11 | DIM1200ASM45-TS001 | IGC10R60D



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Обновления
IGBT: G50T65LBBW | G50T65DS | G40N120D | G25T120D | DHG60T65D | DGF30F65M2 | DGE20F65M2 | DGD06F65M2 | DGC75F65M | DGC75F120M2 | DGC60F65M
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