IQAB75N60D1 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IQAB75N60D1
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 300 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 75 A
Tjⓘ - Temperatura máxima de unión: 150 ℃
CARACTERÍSTICAS ELÉCTRICAS
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.5 V @25℃
trⓘ - Tiempo de subida, typ: 36 nS
Coesⓘ - Capacitancia de salida, typ: 288 pF
Encapsulados: TO247
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IQAB75N60D1 datasheet
iqab75n60d1.pdf
IQAB75N60D1 PRELIMINARY DATASHEET IGBT in Trench & Field Stop technology with soft, fast recovery anti-parallel diode, in TO-247 Package Very high switching speed Very low V CE(sat) Short circuit withstand time - 5 s Designed for frequency converters and UPS Very tight parameter distribution High ruggedness, temperature stable Parallel switching capabilit
iqab75n60a1.pdf
IQAB75N60A1 PRELIMINARY DATASHEET IGBT Trench & Field Stop technology in TO247 Package Very high switching speed Very low V CE(sat) Short circuit withstand time - 5 s Designed for frequency converters and UPS Very tight parameter distribution High ruggedness, temperature stability Parallel switching capability Pb-free lead finish; RoHS comp
Otros transistores... MMG450WB170B6EN , MMG400D170B6EN , IGW30N65L5 , IKD06N60-RF , IKD10N60RF , IKD15N60RF , IQAB50N60D1 , IQAB75N60A1 , SGT40N60FD2PT , IQG1B150N120B4 , IQG1B228N120B4 , IQG1B300N120B4 , IQG1B456N120B4 , IQG1B600N120B4 , IQGB150N120GA4 , IQGB150N120GB4 , IQGB150N120I4 .
History: MMG400D170B6EN
History: MMG400D170B6EN
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