IQAB75N60D1 IGBT. Datasheet pdf. Equivalent
Type Designator: IQAB75N60D1
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 300 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 75 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.5 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.7 V
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 36 nS
Coesⓘ - Output Capacitance, typ: 288 pF
Qgⓘ - Total Gate Charge, typ: 470 nC
Package: TO247
IQAB75N60D1 Transistor Equivalent Substitute - IGBT Cross-Reference Search
IQAB75N60D1 Datasheet (PDF)
iqab75n60d1.pdf
IQAB75N60D1PRELIMINARY DATASHEETIGBT in Trench & Field Stop technology with soft, fast recovery anti-paralleldiode, in TO-247 Package Very high switching speed Very low VCE(sat) Short circuit withstand time - 5s Designed for frequency converters and UPS Very tight parameter distribution High ruggedness, temperature stable Parallel switching capabilit
iqab75n60a1.pdf
IQAB75N60A1 PRELIMINARY DATASHEET IGBT Trench & Field Stop technology in TO247 Package Very high switching speed Very low V CE(sat) Short circuit withstand time - 5s Designed for frequency converters and UPS Very tight parameter distribution High ruggedness, temperature stability Parallel switching capability Pb-free lead finish; RoHS comp
Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
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