IQG1B150N120B4 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IQG1B150N120B4
Tipo de transistor: IGBT
Polaridad de transistor: N
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 150 A
Tjⓘ - Temperatura máxima de unión: 150 ℃
CARACTERÍSTICAS ELÉCTRICAS
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.9 V @25℃
trⓘ - Tiempo de subida, typ: 164 nS
Coesⓘ - Capacitancia de salida, typ: 800 pF
Encapsulados: MODULE
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IQG1B150N120B4 datasheet
iqg1b150n120b4.pdf
IQG1B150N120B4 PRELIMINARY DATASHEET IGBT Module in iQpakTM3 Package Single Switch FEATURES Ultra low loss IGBT Highly rugged SPT design Pb free finished; RoHS compliant MAXIMUM RATINGS, at T = 25oC, unless otherwise specified j Parameter Symbol Value Units Collector-emitter voltage V 1200 V CES DC collector current, T =150oC jmax I 150 C o T =80 C C Peak collect
iqg1b600n120b4.pdf
IQG1B600N120B4 PRELIMINARY DATASHEET IGBT Module in iQPaK 3 Package Single Switch FEATURES Ultra low loss IGBT Highly rugged SPT design Pb-free finished; RoHS compliant MAXIMUM RATINGS Parameter Symbol Value Units Collector-emitter voltage V 1200 V CES DC collector current, T =150oC jmax I 600 C o T =80 C C Peak collector current I 1200 A Cpuls o T =80 C C
iqg1b228n120b4.pdf
IQG1B228N120B4 PRELIMINARY DATASHEET IGBT Module in iQpakTM3 Package Single Switch FEATURES Ultra low loss IGBT Highly rugged SPT design Pb free finished; RoHS compliant MAXIMUM RATINGS, at T = 25oC, unless otherwise specified j Parameter Symbol Value Units Collector-emitter voltage V 1200 V CES DC collector current, T =150oC jmax I 228 C o T =80 C C Peak collect
iqg1b300n120b4.pdf
IQG1B300N120B4 PRELIMINARY DATASHEET IGBT Module in iQpak 3 Package Single Switch FEATURES Ultra low loss IGBT Highly rugged SPT design Pb free finished; RoHS compliant MAXIMUM RATINGS, at T = 25oC, unless otherwise specified j Parameter Symbol Value Units Collector-emitter voltage V 1200 V CES DC collector current, T =150oC jmax I 300 C o T =80 C C Peak collect
Otros transistores... MMG400D170B6EN , IGW30N65L5 , IKD06N60-RF , IKD10N60RF , IKD15N60RF , IQAB50N60D1 , IQAB75N60A1 , IQAB75N60D1 , STGW60V60DF , IQG1B228N120B4 , IQG1B300N120B4 , IQG1B456N120B4 , IQG1B600N120B4 , IQGB150N120GA4 , IQGB150N120GB4 , IQGB150N120I4 , IQGB228N120GA4 .
History: IQAB50N60D1 | IQAB75N60A1 | MMG450WB170B6EN | MMG400D120B6HN
History: IQAB50N60D1 | IQAB75N60A1 | MMG450WB170B6EN | MMG400D120B6HN
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Recientemente añadidas las descripciónes de los transistores
IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
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